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相关论文: Universality and Critical Behavior at the Mott tra…

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We study the thermodynamics near the generic (density-driven) superfluid--Mott-insulator transition in the three-dimensional Bose-Hubbard model using the nonperturbative renormalization-group approach. At low energy the physics is…

量子气体 · 物理学 2012-11-28 A. Rancon , N. Dupuis

We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…

无序系统与神经网络 · 物理学 2019-11-04 K. Ziegler

In the field of interacting electron systems the Mott metal-to-insulator (MI) transition represents one of the pivotal issues. The role played by lattice degrees of freedom for the Mott MI transition and the Mott criticality in a variety of…

强关联电子 · 物理学 2015-01-28 Mariano de Souza , Lorenz Bartosch

Universality aids consistent understanding of physical properties. This includes understanding the states of matter where a theory predicts how a property of a phase (solid, liquid, gas) changes with temperature or pressure. Here, we show…

统计力学 · 物理学 2022-08-17 Cillian Cockrell , Kostya Trachenko

I show that the quantum critical points observed in heavy fermions (the `Kondo breakdown') and in doped cuprates can be understood in terms of concealed Mott criticality. In this picture, one species of electrons undergoes a Mott…

强关联电子 · 物理学 2025-10-03 Louk Rademaker

We discuss some aspects of the pressure (or interaction) driven Mott transition, in three dimensional transition metal oxides by means of dynami cal mean field theory. We isolate the universal properties of the transition from the aspects…

强关联电子 · 物理学 2009-10-31 G. Kotliar

We have performed in-plane transport measurements on the two-dimensional organic salt $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl. A variable (gas) pressure technique allows for a detailed study of the changes in conductivity through the…

强关联电子 · 物理学 2009-11-10 P. Limelette , P. Wzietek , S. Florens , A. Georges , T. A. Costi , C. Pasquier , D. Jerome , C. Meziere , P. Batail

Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states.…

The metal-insulator transition in correlated electron systems, where electron states transform from itinerant to localized, has been one of the central themes of condensed matter physics for more than half a century. The persistence of this…

We report a simulation of the metal-insulator transition in a model of a doped semiconductor that treats disorder and interactions on an equal footing. The model is analyzed using density functional theory. From a multi-fractal analysis of…

无序系统与神经网络 · 物理学 2014-05-13 Yosuke Harashima , Keith Slevin

We demonstrate that the Mott transition exhibits universal scaling as a consequence of the breaking of a $\mathbb{Z}_2$ symmetry in momentum space. A direct consequence of this discrete symmetry breaking is the charge or Mott gap itself.…

强关联电子 · 物理学 2025-11-25 Jinchao Zhao , Peizhi Mai , Gaurav Tenkila , Philip W. Phillips

To provide an understanding of the universal thermodynamic properties of cuprate superconductors, emerging from the empirical correlations and phase diagrams, we analyze them in terms of the scaling theory of finite temperature and quantum…

超导电性 · 物理学 2007-05-23 T. Schneider

We present evidence for Mott quantum criticality in an anisotropic two-dimensional system of coupled Hubbard chains at half-filling. In this scenario emerging from variational cluster approximation and cluster dynamical mean-field theory,…

强关联电子 · 物理学 2016-03-08 Benjamin Lenz , Salvatore R. Manmana , Thomas Pruschke , Fakher F. Assaad , Marcin Raczkowski

To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical…

介观与纳米尺度物理 · 物理学 2016-06-15 Ting Chen , K. V. Reich , Nicolaas J. Kramer , Han Fu , Uwe R. Kortshagen , B. I. Shklovskii

We experimentally study the critical properties of the non-equilibrium solid-liquid-like transition that takes place in vibrated granular matter. The critical dynamics is characterized by the coupling of the density field with the…

统计力学 · 物理学 2015-06-23 Gustavo Castillo , Nicolás Mujica , Rodrigo Soto

We experimentally test the universality of the Anderson three dimensional metal-insulator transition. Nine sets of parameters controlling the microscopic details of this second order phase transition have been tested. The corresponding…

We consider the low-temperature differential tunneling conductance $G$ for interfaces between a planar insulating material in the Mott-class and a metal. For values of the the applied potential difference $V$ that are not very small, there…

强关联电子 · 物理学 2019-12-30 Federico L. Bottesi , Guillermo R. Zemba

Background: Quantum Chromodynamics is expected to have a phase transition in the same static universality class as the 3D Ising model and the liquid-gas phase transition. The properties of the equation of state, the transport coefficients,…

核理论 · 物理学 2012-12-11 Joseph I. Kapusta , Juan M. Torres-Rincon

The counterion-condensation transition at charged cylinders is studied using Monte-Carlo simulation methods. Employing logarithmically rescaled radial coordinates, large system sizes are tractable and the critical behavior is determined by…

软凝聚态物质 · 物理学 2009-11-11 Ali Naji , Roland R. Netz

We introduce a systematic low-energy approach to strongly correlated electron systems in infinite dimensions, and apply it to the problem of the correlation-induced metal-insulator transition in the half-filled Hubbard model. We determine…

凝聚态物理 · 物理学 2007-05-23 Goetz Moeller , Qimiao Si , Gabriel Kotliar , Marcelo Rozenberg