相关论文: Universality and Critical Behavior at the Mott tra…
The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…
We have investigated a contribution of the density of state (DOS) to the Mott metal-insulator transition (MIT). The MIT condition is given by the DOS, which usually requires the complicated fundamental equations. To simplify the process, we…
We study electric transport near the Mott metal-insulator transition. Optical conductivity of the half-filled Hubbard model on a triangular lattice is calculated based on a cellular dynamical mean field theory including vertex corrections…
V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the…
Coupling of charge and lattice degrees of freedom in materials can produce intriguing electronic phenomena, such as conventional superconductivity where the electrons are mediated by lattice for creating supercurrent. The Mott transition,…
We present temperature-dependent conductivity data obtained on a sample set of nanogranular Pt-C with finely tuned inter-grain tunnel coupling strength g. For samples in the strong-coupling regime g > g_C, characterized by a finite…
Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…
Temperature dependence in the interval 4.2-300 K and the critical behavior of the dielectric function along c-axis in NaV2O5 have been studied in the frequency range 1 MHz-1 GHz. These data were analyzed together with literature data…
We investigate the critical behaviors of correlation length and critical exponents for strongly interacting bosons in a two-dimensional optical lattice via quantum Monte Carlo simulations. By comparing the full numerical results to those…
Theory of classical critical phenomena of Mott transition is developed for the dimensionality $d \le \infty$. Reconsidering a cluster dynamical mean-field theory (DMFT), Ginzburg-Landau free energy is derived in terms of hybridization…
The dielectric permittivity and resistivity have been measured simultaneously as a function of magnetic field in Pr1-xCaxMnO3 crystals with different doping. A huge increase of dielectric permittivity was detected near percolation…
The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has…
Discontinuous changes of the lattice parameters at the Mott metal-insulator transition are detected by high-resolution dilatometry on deuterated crystals of the layered organic conductor $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. The…
We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric…
We study theoretically the zero temperature phase transition in two dimensions from a Fermi liquid to a paramagnetic Mott insulator with a spinon Fermi surface. We show that the approach to the bandwidth controlled Mott transition from the…
The evolution of viscoelastic properties near the sol-gel transition is studied by performing oscillatory rheological measurements on two different types of systems: a colloidal dispersion and a thermo-responsive polymer solution under…
September 30, 2015 marks the 110th anniversary of the birth of the famous English physicist N. F. Mott. This article is dedicated to his memory. Here we consider the problem of metal-insulator transition. It is shown that the Mott criterion…
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…
We show that the dilute Fermi gas quantum critical universality class quantitatively describes the Mott/metal crossover of the two-dimensional Hubbard model for temperatures somewhat less than (roughly half) the tunneling but much greater…
Interplay between the Mott transition and the multicritical phenomenon of d-wave superconductivity (SC) and antiferromagnetism (AF) is studied theoretically. We describe the Mott transition, which is analogous to a liquid-gas phase…