相关论文: Spin Hall Insulator

Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence…

We propose an approach to induce nontrivial bands with non-zero Chern numbers by utilizing strong spin-orbit coupling in transition metal dichalcogenides with dopants. We demonstrate that a doped state near the valence-band edge induces…

An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new…

The third-rank tensor of the static spin Hall conductivity is investigated for two-dimensional (2D) topological insulators by electronic structure calculations. Its seeming quantization is numerically demonstrated for highly symmetric…

We show that two types of spin-orbit coupling in the 2 dimensional hole gas (2DHG), with and without inversion symmetry breaking, contribute to the intrinsic spin Hall effect\cite{murakami2003,sinova2003}. Furthermore, the vertex correction…

Topological aspects of superconductivity in quantum spin-Hall systems (QSHSs) such as thin layers of three-dimensional topological insulators (3D Tis) or two-dimensional Tis are in the focus of current research. We examine hybrid…

We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band…

We show that hybrid structures of topological insulators and materials without topological protection can be employed to create perfectly conducting channels hosted in the non-topological part. These states inherit the topological…

The spin-Hall conductivity in spatially-homogeneous two-dimensional electron systems described by the spin-orbit Hamiltonian \hbar \Omega_p \sigma is presented as a sum of the universal part Me/8 \pi \hbar determined by the Berry phase…

The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…

Spin Hall effect in a nonlocal spin-injection device is theoretically studied. Using a nonlocal spin-injection technique, a pure spin current is created in a nonmagnetic metal (N). The spin current flowing in N is deflected by spin-orbit…

We discover an intrinsic dipole Hall effect in a variety of magnetic insulating states at integer fillings of twisted MoTe$_2$ moir\'e superlattice, including topologically trivial and nontrivial ferro-, antiferro-, and ferri-magnetic…

We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for…

The layer Hall effect is an intriguing phenomenon observed in magnetic topological layered materials, where the Hall response arises from the opposite deflection of electrons on top and bottom layers. To realize layer Hall effect,…

We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…

We demonstrate that interacting electrons in AB-stacked $\mathrm{MoTe}_2/\mathrm{WSe}_2$ realize a topological Kondo insulator at hole filling $\nu=2$ per moir\'e unit cell. In the presence of only local correlations, a symmetry of the…

The carrier spin and impurity spin densities in diluted magnetic semiconductors are considered using a semiclassical approach. Equations of motions for the spin densities and the carrier spin current density in the paramagnetic phase are…

Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications.…

A normal metallic system proximitized by a superconductor can exhibit a gapless superconducting state characterized by segmented Fermi surfaces, as confirmed experimentally. In such a state, quasiparticle states remain gapless along one…

The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades.…