相关论文: Spin Hall Insulator

Spin current is a central theme in spintronics, and its generation is a keen issue. The spin-polarized current injection from the ferromagnet, spin battery, and spin Hall effect have been used to generate spin current, but Ohmic currents in…

Ever since its discovery, the electron spin has only been measured or manipulated through the application of an electromagnetic force acting on the associated magnetic moment. In this work, we propose a spin Aharonov-Bohm effect in which…

Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while…

Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside insulating bulk gap. Here, by using first-principles calculations, we discover group-IV chalcogenide Si2Te2…

Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers…

We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of…

We study the spin Hall effect taking into account the impurity scattering effect as general as possible with the focus on the definition of the spin current. The conserved bulk spin current (Shi et al. [Phys. Rev. Lett. 96, 076604 (2006)])…

Quantum spin Hall (QSH) effect is quite promising for applications in spintronics and quantum computations, but presently can only be achieved at ultralow temperature. Searching for large-gap QSH insulators is the key to increase the…

We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena,…

The magnetic spin Hall effect is a time-reversal-odd phenomenon in which spin current is induced by the charge current. In the presence of a spin-orbit coupling and/or noncolinear magnetism, however, spin current is not uniquely defined.…

We study a two-dimensional electron system in the presence of spin-orbit interaction. It is shown analytically that the spin-orbit interaction acts as a transversal effective electric field, whose orientation depends on the sign of the…

Theoretical calculations predict the dissipationless circulating current induced by a spin defect in a two-dimensional electron gas with spin-orbit coupling. The shape and spatial extent of these dissipationless circulating currents depend…

Topological insulators are characterized by a nontrivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we…

Spintronics is an analogue to electronics where spin of the electron rather than its charge is functionally controlled for devices. The generation and detection of spin current without ferromagnetic or exotic/scarce materials are two the…

We demonstrate that spin-orbit coupled electrons in a magnetically doped system exert a spin torque on the local magnetization, without a flowing current, when the chemical potential is modulated in a magnetic field. The spin torque is…

It is argued that experiments on rotating superconductors provide evidence for the existence of macroscopic spin currents in superconductors in the absence of applied external fields. Furthermore it is shown that the model of hole…

The original motivation of great interest to topological insulators was the hope to observe the quantum spin Hall effect. Therefore if a material is in the topological insulator state they frequently call it the quantum spin Hall state.…

We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…

The generation of pure spin current, spin angular momentum transport without charge flow, is crucial for developing energy-efficient spintronic devices with minimal Joule heating. Here, we introduce the intrinsic nonlinear pure spin Hall…

The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability,…