相关论文: Metal-Insulator-Like Behavior in Semimetallic Bism…
The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and…
High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2K in a magnetic…
In topological insulators (TIs), metallic surface conductance saturates the insulating bulk resistance with de- creasing temperature, resulting in resistivity plateau at low temperatures as a transport signature originating from metallic…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…
We show that the spin pumping from ferromagnetic insulator into the adjacent metallic spin sink can be strongly stimulated by the superconducting correlations. The key physical mechanism responsible for this effect is the presence of…
A semimagnetic topological insulator -- a heterostructure combining a topological insulator with a ferromagnet -- exhibits a half-quantized Hall effect, characterized by a quantized Hall conductance of $\frac{1}{2}\frac{e^{2}}{h}$ (where…
We report a super-insulating behavior, in a device having granular Pb film on back-gated few-layer $\mathrm{MoS_2}$, below an onset temperature same as the critical temperature $T_{\rm C}\approx7$ K of bulk Pb. Below $T_{\rm C}$, the…
The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large…
The observation of metallic ground states in a variety of two-dimensional electronic systems poses a fundamental challenge for the theory of electron fluids. Here, we analyze evidence for the existence of a regime, which we call the…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
It has been found that periodically closely spaced vacancies on a graphite sheet cause a significant rearrange-ment of its electronic spectrum: metallic waveguides with a high density of states near the Fermi level are formed along the…
We report on the temperature and field driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents and suppression of the extraordinary…
We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…
Measurements on resistivity and magnetic susceptibility have been carried out for Bi single crystals under pressures up to 10.5GPa. The temperature dependent resistivity shows a semimetallic behavior at ambient and low pressures (below…
The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T-dependence is observed for T < 50 K, which is either metallic, or insulating,…
Transport characteristics of single crystal bismuth films on Si(111)-7 \times 7 are found to be metallic or insulating at temperature below or above TC, respectively. The transition temperature TC decreases as the film thickness increases.…
We consider quasi-two-dimensional gas of electrons in a typical Si-MOSFET, assuming repulsive contact interaction between electrons. Magnetisation and susceptibility are evaluated within the mean-field approach. Finite thickness of the…
We consider the influence of a spin accumulation in a normal metal on the magnetic statics and dynamics in an adjacent magnetic insulator. In particular, we focus on arbitary angles between the spin accumulation and the easy-axis of the…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…