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相关论文: The vanadium Magneli phases VnO(2n-1)

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The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has…

Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries…

Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the…

Heterostructuring provides different ways to manipulate the orbital degrees of freedom and to tailor orbital occupations in transition metal oxides. However, the reliable prediction of these modifications remains a challenge. Here, we…

In VO$_2$, the explicit origin of the insulator-to-metal transition is still disputable between Peierls and Mott insulators. Along with the controversy, its second monoclinic (M2) phase has received considerable attention due to the…

Results of first principles augmented spherical wave electronic structure calculations for niobium dioxide are presented. Both metallic rutile and insulating low-temperature NbO2, which crystallizes in a distorted rutile structure, are…

强关联电子 · 物理学 2009-11-07 V. Eyert

Two-dimensional (2D) layered magnetic materials are generating a great amount of interest for the next generation of electronic devices thanks to their remarkable properties associated to spin dynamics. The recently discovered layered…

Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase…

The complex interplay between several active degrees of freedom (charge, lattice, orbtial and spin order) is thought to determine the electronic properties of many oxides, but the respective role of the various contributions is often…

The structure and magnetic properties of Mn1+xV2-xO4 (0<x<=1), a complex frustrated system, were investigated by heat capacity, magnetization, x-ray diffraction, and neutron diffraction measurements. For x<=0.3, a cubic-to-tetragonal (c >…

强关联电子 · 物理学 2020-10-07 J. L. Jiao , H. P. Zhang , Q. Huang , W. Wang , G. Wang , Q. Ren , R. Sinclair , G. T. Lin , A. Huq , H. Cao , H. D. Zhou , M. Z. Li , J. Ma

We present cluster-DMFT (CTQMC) calculations based on a downfolded tight-binding model in order to study the electronic structure of vanadium dioxide (VO_2) both in the low-temperature (M_1) and high-temperature (rutile) phases. Motivated…

强关联电子 · 物理学 2015-05-18 Bence Lazarovits , Kyoo Kim , Kristjan Haule , Gabriel Kotliar

We investigate the interplay of the electronic and structural transition in La$_{0.2}$Sr$_{0.8}$MnO$_{3}$. The transport and specific heat measurements exhibit unusual evolutions and signature of a first order phase transition around 265 K.…

强关联电子 · 物理学 2009-11-13 R. Bindu , Kalobaran Maiti , R. Rawat , S. Khalid

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations…

应用物理 · 物理学 2020-01-08 Alexander Pergament , Andrei Velichko , Maksim Belyaev , Vadim Putrolaynen

The origin of simultaneous electronic, structural and magnetic transitions in bulk rare-earth nickelates ($RE$NiO$_3$) remains puzzling with multiple conflicting reports on the nature of these entangled phase transitions. Heterostructure…

We analyze the effects on the structural and electronic properties of vanadium dioxide (VO$_2$) of adding an empirical inter-atomic potential within the density-functional theory$+V$ (DFT$+V$) framework. We use the DFT$+V$ machinery founded…

材料科学 · 物理学 2025-04-15 Lea Haas , Peter Mlkvik , Nicola A. Spaldin , Claude Ederer

Vanadium pentoxide (V2O5), the most stable member of vanadium oxide family, exhibits interesting semiconductor to metal transition in the temperature range of 530-560 K. The metallic behavior originates because of the reduction of V2O5…

材料科学 · 物理学 2017-05-12 Raktima Basu , Arun K. Prasad , Sandip Dhara , A. Das

We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic…

Rare-earth nickelates RNiO3 (R=rare-earth element) exhibit three kinds of phase transitions with decreasing temperature: a structural transition from a pseudo-cubic to a monoclinic phase, a metal- insulator transition (MIT), and a magnetic…

We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT,…

强关联电子 · 物理学 2009-11-13 Y. J. Chang , J. S. Yang , Y. S. Kim , D. H. Kim , T. W. Noh , D. -W. Kim , E. OH , B. Kahng , J. -S. Chung

We report the synthesis, crystal structure, physical properties, and first-principles calculations of a vanadium-based oxytelluride Rb$_{1-\delta}$V$_2$Te$_2$O ($\delta\approx0.2$). The crystal structure bears two-dimensional V$_2$O square…

超导电性 · 物理学 2018-08-20 Abduweli Ablimit , Yun-Lei Sun , Hao Jiang , Si-Qi Wu , Ya-Bin Liu , Guang-Han Cao