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相关论文: The vanadium Magneli phases VnO(2n-1)

200 篇论文

We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we…

强关联电子 · 物理学 2009-11-11 M. S. Laad , L. Craco , E. Müller-Hartmann

The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) has garnered extensive attention for its potential applications in ultrafast switches, neuronal network architectures, and storage technologies. However, a significant…

材料科学 · 物理学 2025-01-07 Feng-Wu Guo , Wen-Hao Liu , Zhi Wang , Shu-Shen Li , Lin-Wang Wang , Jun-Wei Luo

Motivated by recent results of $N$th order muffin-tin orbital (NMTO) implementation of the density functional theory (DFT), we re-examine low-temperature ground-state properties of the anti-ferromagnetic insulating phase of vanadium…

强关联电子 · 物理学 2015-05-13 N. B. Perkins , S. Di Matteo , C. R. Natoli

The metal-insulator transition (MIT) in rare-earth nickelates exemplifies the intricate interplay between electronic correlations and lattice dynamics in quantum materials. This work focuses on SmNiO$_3$ as a prototypical system, employing…

材料科学 · 物理学 2025-03-12 Guoyong Shi , Fenglin Deng , Ri He , Dachuan Chen , Xuejiao Chen , Peiheng Jiang , Zhicheng Zhong

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the…

Controlling the insulator-metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for exploring exotic structural transformation and physical functionality. Oxygen vacancy serves as a…

材料科学 · 物理学 2025-12-19 Xuanchi Zhou , Xiaohui Yao , Xiaomei Qiao , Jiahui Ji , Guowei Zhou , Huihui Ji , Xiaohong Xu

Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…

VO2 features concomitant structural and metal-insulator transitions. This poses a challenge for understanding the underlying mechanism: is the transition triggered by a structural or by an electronic instability? The two scenarios are…

We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT), of vanadium dioxide (VO2) thin films synthesized on LSAT (111) ([LaAlO3]0.3[Sr2AlTaO6]0.7) substrates by pulsed laser…

材料科学 · 物理学 2019-06-11 Yang Liu , Shanyuan Niu , Thomas Orvis , Haimang Zhang , Han Wang , Jayakanth Ravichandran

V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the…

Vanadium dioxide (VO$_2$) has received significant interest in the context of nanophotonic metamaterials and memories owing to its reversible insulator-metal transition associated with significant changes in its optical and electronic…

介观与纳米尺度物理 · 物理学 2025-02-25 Peter Kepič , Michal Horák , Jiří Kabát , Vlastimil Křápek , Andrea Konečná , Tomáš Šikola , Filip Ligmajer

The microscopic mechanism of the metal-insulator transition is studied by orbital-resolved 51V NMR spectroscopy in a prototype of the quasi-one-dimensional system V6O13. We uncover that the transition involves a site-selective d orbital…

强关联电子 · 物理学 2015-04-24 Yasuhiro Shimizu , Satoshi Aoyama , Takaaki Jinno , Masayuki Itoh , Yutaka Ueda

LV4O8 (L = Yb, Y, Lu) compounds are reported to crystallize in a structure similar to that of the orthorhombic CaFe2O4 structure-type, and contain four inequivalent V sites arranged in zigzag chains. We confirm the structure and report the…

强关联电子 · 物理学 2010-11-17 S. Das , A. Niazi , Y. Mudryk , V. K. Pecharsky , D. C. Johnston

Structural transformation between metallic (1T) and semiconducting (2H) phases of single-layered MoS2 was systematically investigated by an in situ STEM with atomic precision. The 1T/2H phase transition is comprised of S and/or Mo…

材料科学 · 物理学 2013-10-10 Yung-Chang Lin , Dumitru O. Dumcenco , Ying-Sheng Huang , Kazu Suenaga

We present results from an experimental study of the equilibrium and non-equilibrium transport properties of vanadium oxide nanobeams near the metal-insulator transition (MIT). Application of a large electric field in the insulating phase…

Defects in the rutile TiO${}_2$ structures have been extensively studied, but the intrinsic defects of the oxygen deficient Ti${}_n$O${}_{2n-1}$ phases have not been given the same amount of consideration. Those structures, known as…

材料科学 · 物理学 2014-08-04 A. C. M. Padilha , J. M. Osório-Guillen , A. R. Rocha , G. M. Dalpian

Multilayer (TiO$_2$)$_m$/(VO$_2$)$_n$ nanostructures ($d^1$ - $d^0$ interfaces with no polar discontinuity) show a metal-insulator transition with respect to the VO$_2$ layer thickness in first principles calculations. For $n$ $\geq$ 5…

强关联电子 · 物理学 2015-05-14 Victor Pardo , Warren E. Pickett

Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} \sim…

材料科学 · 物理学 2020-04-29 P. Ganesh , Frank Lechermann , Ilkka Kylanpaa , Jaron Krogel , Paul R. C. Kent , Olle Heinonen

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…

Emergent magnetic states at oxide interfaces arise from the interplay of charge transfer, orbital reconstruction, and dimensional confinement, offering a route to engineered correlated-electron behavior in nanoscale spintronic materials.…