中文
相关论文

相关论文: Self-localization of holes in a lightly doped Mott…

200 篇论文

The fate of an injected hole in a Mott antiferromagnet is an outstanding issue of strongly correlated physics. It provides important insights into doped Mott insulators closely related to high-temperature superconductivity in cuprates.…

强关联电子 · 物理学 2013-11-22 Zheng Zhu , Hong-Chen Jiang , Yang Qi , Chu-Shun Tian , Zheng-Yu Weng

We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of…

强关联电子 · 物理学 2009-11-11 Ting-Pong Choy , Philip Phillips

The cuprate high-temperature superconductors are among the most intensively studied materials, yet essential questions regarding their principal phases and the transitions between them remain unanswered. Generally thought of as doped…

超导电性 · 物理学 2020-03-18 D. Pelc , P. Popčević , G. Yu , M. Požek , M. Greven , N. Barišić

Based on an effective model of a doped antiferromagnetic Mott insulator, we show that a doped hole will induce a dipole-like spin configuration in a spin ordered phase at low doping. The kinetic energy of doped holes is severely frustrated…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Zheng-Yu Weng

An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly…

强关联电子 · 物理学 2020-03-05 D. A. Dobushovskyi , A. M. Shvaika

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

A long-standing issue in the physics of strongly correlated electronic systems is whether the motion of a single hole in quantum antiferromagnets can be understood in terms of the quasiparticle picture. Very recently, investigations of this…

强关联电子 · 物理学 2012-05-25 Zheng Zhu , Hong-Chen Jiang , Yang Qi , Chu-Shun Tian , Zheng-Yu Weng

The electric resistivity is examined in the constrained Hilbert space of a doped Mott insulator, which is dictated by a non-Ioffe-Larkin composition rule due to the underlying mutual Chern-Simons topological gauge structure. In the…

强关联电子 · 物理学 2025-04-23 Chuan Chen , Jia-Xin Zhang , Zhi-Jian Song , Zheng-Yu Weng

Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…

高能物理 - 理论 · 物理学 2018-08-03 Tomas Andrade , Alexander Krikun , Koenraad Schalm , Jan Zaanen

This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro

Identification of the electronic state that appears upon doping a Mott insulator is important to understand the physics of cuprate high-temperature superconductors. Recent scanning tunneling microscopy of cuprates provides evidence that a…

超导电性 · 物理学 2019-01-31 R. Nourafkan , M. Côté , A. - M. S. Tremblay

We show that the strong coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single particle spectrum below a characteristic temperature.…

强关联电子 · 物理学 2009-11-07 Tudor D. Stanescu , Philip Phillips

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping…

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

强关联电子 · 物理学 2015-06-25 Subroto Mukerjee , J. E. Moore

Photo-doping of Mott insulators or correlated metals can create an unusual metallic state which simultaneously hosts hole-like and electron-like particles. We study the dynamics of this state up to long times, as it passes its kinetic…

强关联电子 · 物理学 2021-05-26 Nagamalleswararao Dasari , Jiajun Li , Philipp Werner , Martin Eckstein

A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate…

超导电性 · 物理学 2017-02-21 Peng Cai , Wei Ruan , Yingying Peng , Cun Ye , Xintong Li , Zhenqi Hao , Xingjiang Zhou , Dung-Hai Lee , Yayu Wang

An explicit $\textit{spatial}$ localization of a hole is shown in a two-leg $t$-$J$ ladder in the presence of a staggered chemical potential, which still retains a translational symmetry, by density matrix renormalization group method.…

强关联电子 · 物理学 2019-07-10 Rong-Yang Sun , Zheng Zhu , Zheng-Yu Weng

We consider the problem of the doped Ising antiferromagnet on the frustrated triangular lattice in the limit where the hole kinetic energy is much smaller than the Ising exchange. For a {\it single} hole we prove a ``frustrated Nagaoka…

强关联电子 · 物理学 2016-08-31 R. Moessner , S. L. Sondhi

We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…

强关联电子 · 物理学 2009-11-10 K. Haule , A. Rosch , J. Kroha , P. Wölfle

Within the t-t'-J model, the charge asymmetry in superconductivity of hole- and electron-doped cuprates is studied based on the kinetic energy driven superconducting mechanism. It is shown that superconductivity appears over a narrow range…

超导电性 · 物理学 2009-11-11 Tianxing Ma , Shiping Feng
‹ 上一页 1 2 3 10 下一页 ›