相关论文: Return to return point memory

Resistive Random Access Memories (RRAMs) are being studied by the industry and academia because it is widely accepted that they are promising candidates for the next generation of high density nonvolatile memories. Taking into account the…

Non-equilibrium systems display memory, a dependence not merely on their present environment but on previously applied fields. Multistable systems such as spin glasses, martensites and granular matter have exponentially many microstates…

It is shown that magnetic states and field-driven reorientation transitions in synthetic antiferromagnets crucially depend on contributions of higher-order anisotropies. A phenomenological macrospin model is derived to describe the magnetic…

The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our…

We present a phenomenological theory of filamentary resistive random access memory (RRAM) describing the commonly observed features of their current-voltage characteristics. Our approach follows the approach of thermodynamic theory…

We present antiferromagnetism as a mechanism capable of modifying substantially the phase diagram and the critical behaviour of statistical mechanical models. This is particularly relevant in four dimensions, due to the connection between…

The Random-Field Ising Model (RFIM) has been extensively studied as a model system for understanding the effects of disorder in magnets. Since the late 1970s, there has been a particular focus on realizations of the RFIM in site-diluted…

Antiferromagnetic chains with an odd number of spins are known to undergo a transition from an antiparallel to a spin-flop configuration when subjected to an increasing magnetic field. We show that in the presence of an anisotropy favoring…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and…

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…

Using coherent x-ray speckle metrology, we have measured the influence of disorder on major loop return point memory (RPM) and complementary point memory (CPM) for a series of perpendicular anisotropy Co/Pt multilayer films. In the low…

A review is given on some recent developments in the theory of the Ising model in a random field. This model is a good representation of a large number of impure materials. After a short repetition of earlier arguments, which prove the…

We consider the athermal quasi-static dynamics (AQS) of disordered systems driven by a slowly varying external field. Our interest is in an automaton description (AQS-A) that represents the AQS dynamics in terms of the graph of state…

We study the so-called neural network flow of spin configurations in the 2-d Ising ferromagnet. This flow is generated by successive reconstructions of spin configurations, obtained by an artificial neural network like a restricted…

We present results on the low-frequency dynamical and transport properties of random quantum systems whose low temperature ($T$), low-energy behavior is controlled by strong disorder fixed points. We obtain the momentum and frequency…

Reversible computing is a paradigm of computation that reflects physical reversibility, one of the fundamental microscopic laws of Nature. In this survey, we discuss topics on reversible logic elements with memory (RLEM), which can be used…

We investigate the performance of machine learning algorithms trained exclusively with configurations obtained from importance sampling Monte Carlo simulations of the two-dimensional Ising model with conserved magnetization. For supervised…

In a recent paper [Phys. Rev. Lett. 91, 117201 (2003)], it is argued that an itinerant antiferromagnet in an external magnetic field undergoes a spin-flip transition, in marked contrast with the behavior of a localized antiferromagnet: for…

The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…