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相关论文: Spin relaxations in semiconductor quantum dots

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Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such…

材料科学 · 物理学 2007-05-23 C. Lü , J. L. Cheng , M. W. Wu

The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…

材料科学 · 物理学 2009-04-11 M. Q. Weng , Y. Y. Wang , M. W. Wu

We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation…

介观与纳米尺度物理 · 物理学 2009-11-10 E. Tsitsishvili , R. v. Baltz , H. Kalt

We have studied the physical processes responsible for the spin -flip in GaAs quantum dots. We have calculated the rates for different mechanisms which are related to spin-orbit coupling and cause a spin-flip during the inelastic relaxation…

介观与纳米尺度物理 · 物理学 2009-10-31 Alexander V. Khaetskii , Yuli V. Nazarov

We present full atomistic calculations of the spin-flip time (T$_{1}$) of electrons and holes mediated by acoustic phonons in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. At low magnetic field, the first-order…

材料科学 · 物理学 2015-05-20 Hai Wei , Ming Gong , G-C Guo , Lixin He

We estimate the spin relaxation rate due to spin-orbit coupling and acoustic phonon scattering in weakly-confined quantum dots with up to five interacting electrons. The Full Configuration Interaction approach is used to account for the…

介观与纳米尺度物理 · 物理学 2009-11-13 Juan I. Climente , Andrea Bertoni , Guido Goldoni , Massimo Rontani , Elisa Molinari

The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing…

介观与纳米尺度物理 · 物理学 2009-11-11 Y. Y. Liao , Y. N. Chen , D. S. Chuu , T. Brandes

Electron spin relaxation induced by phonon-mediated s-d exchange interaction in a II-VI diluted magnetic semiconductor quantum dot is investigated theoretically. The electron-acoustic phonon interaction due to piezoelectric coupling and…

介观与纳米尺度物理 · 物理学 2007-05-23 W. Yang , K. Chang

We present numerical results for electron spin relaxation rates for single and laterally coupled double GaAs quantum dots in a perpendicular magnetic field. As source of spin relaxation we consider hyperfine interaction with the nuclear…

介观与纳米尺度物理 · 物理学 2007-12-17 Johannes Voss , Daniela Pfannkuche

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum…

介观与纳米尺度物理 · 物理学 2015-03-17 Martin Raith , Peter Stano , Jaroslav Fabian

The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the…

材料科学 · 物理学 2015-06-25 T. Ohms , K. Hiebbner , H. C. Schneider , M. Aeschlimann

Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…

介观与纳米尺度物理 · 物理学 2013-02-01 Martin Raith , Peter Stano , Jaroslav Fabian

Long-range quantum communication for spin qubits is an important open problem. Here we study decoherence of an electron spin qubit that is being transported in a moving quantum dot. We focus on spin decoherence due to spin-orbit interaction…

介观与纳米尺度物理 · 物理学 2013-08-12 Peihao Huang , Xuedong Hu

We propose a scheme to manipulate the spin coherence in vertically coupled GaAs double quantum dots. Up to {\em ten} orders of magnitude variation of the spin relaxation and {\em two} orders of magnitude variation of the spin dephasing can…

材料科学 · 物理学 2008-03-19 Y. Y. Wang , M. W. Wu

Electron spin decoherence caused by elastic spin-phonon processes is investigated comprehensively in a zero-dimensional environment. Specifically, a theoretical treatment is developed for the processes associated with the fluctuations in…

其他凝聚态物理 · 物理学 2009-11-11 Y. G. Semenov , K. W. Kim

We have studied theoretically the electron spin relaxation in semiconductor quantum dots via interaction with nuclear spins. The relaxation is shown to be determined by three processes: (i) -- the precession of the electron spin in the…

凝聚态物理 · 物理学 2009-11-07 I. A. Merkulov , Al. L. Efros , M. Rosen

We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…

介观与纳米尺度物理 · 物理学 2014-02-12 Charles Tahan , Robert Joynt

We study the spin relaxation in an interacting two--dimensional electron gas in a strong magnetic field for the case that the electron density is close to filling just one Landau sub--level of one spin projection, i.e., for filling factor…

介观与纳米尺度物理 · 物理学 2009-10-31 W. Apel , Yu. A. Bychkov

Phonon-induced spin relaxation rates in quantum dots are studied as function of in-plane and perpendicular magnetic fields, temperature and electric field, for different dot sizes. We consider Rashba and Dresselhaus spin-orbit mixing in…

介观与纳米尺度物理 · 物理学 2009-11-10 C. F. Destefani , Sergio E. Ulloa

We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The…

介观与纳米尺度物理 · 物理学 2013-05-29 M. Xiao , M. G. House , H. W. Jiang
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