Hole spin relaxation in semiconductor quantum dots
材料科学
2007-05-23 v1 其他凝聚态物理
摘要
Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width and the temperature on the spin relaxation time are investigated thoroughly. Many features which are quite different from the electron spin relaxation in quantum dots and quantum wells are presented with the underlying physics elaborated.
引用
@article{arxiv.cond-mat/0409249,
title = {Hole spin relaxation in semiconductor quantum dots},
author = {C. Lü and J. L. Cheng and M. W. Wu},
journal= {arXiv preprint arXiv:cond-mat/0409249},
year = {2007}
}
备注
10 pages, 10 figures