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相关论文: Quantum Transport in a Nanosize Silicon-on-Insulat…

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A model is developed for a detailed investigation of the current flowing through a cylindrical nanosize MOSFET with a close gate electrode. The quantum mechanical features of the lateral charge transport are described by Wigner distribution…

介观与纳米尺度物理 · 物理学 2007-05-23 S. N. Balaban , E. P. Pokatilov , V. M. Fomin , V. N. Gladilin , J. T. Devreese , W. Magnus , W. Schoenmaker , M. Van Rossum , B. Soree

Transport through semiconductor nanostructures is a quantum-coherent process. This paper focuses on systems in which the electron's dynamics is ballistic and the transport is dominated by the scattering from structure boundaries. Opposite…

介观与纳米尺度物理 · 物理学 2007-05-23 E. R. Racec , P. N. Racec , U. Wulf

The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of the spectroscopy of the number of scatterings experienced by…

介观与纳米尺度物理 · 物理学 2007-05-23 J. Saint Martin , A. Bournel , P. Dollfus

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…

介观与纳米尺度物理 · 物理学 2009-08-14 I. Knezevic , E. B. Ramayya , D. Vasileska , S. M. Goodnick

Electronic transport is theoretically investigated in laterally confined semiconductor superlattices using the formalism of non-equilibrium Green's functions. The transport properties are calculated for nanowire superlattices of varying…

介观与纳米尺度物理 · 物理学 2014-04-25 Thomas Grange

Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a…

介观与纳米尺度物理 · 物理学 2013-06-04 Dimpy Sharma , Lida Ansari , Baruch Feldman , Marios Iakovidis , James Greer , Giorgos Fagas

We present a time-saving simulator within the framework of the density functional theory to calculate the transport properties of electrons through nanostructures suspended between semi-infinite electrodes. By introducing the Fourier…

材料科学 · 物理学 2015-05-20 Yoshiyuki Egami , Kikuji Hirose , Tomoya Ono

An effective mass based model accounting for the conduction band quantization in a high aspect ratio semiconductor nanotip is developed to describe injected electron transport and subsequent electron emission from the nanotip. A transfer…

介观与纳米尺度物理 · 物理学 2019-06-06 Andrei Piryatinski , Chengkun Huang , Thomas J. T. Kwan

We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…

介观与纳米尺度物理 · 物理学 2015-10-28 C. S. Mayberry , Danhong Huang , G. Balakrishnan , C. Kouhestani , N. Islam , S. R. J. Brueck , A. K. Sharma

I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance…

介观与纳米尺度物理 · 物理学 2013-04-03 C. W. J. Beenakker , H. van Houten

We consider the scattering matrix approach to quantum electron transport in meso- and nano-conductors. This approach is an alternative to the more conventional kinetic equation and Green's function approaches, and often is more efficient…

介观与纳米尺度物理 · 物理学 2015-04-09 G. B. Lesovik , I. A. Sadovskyy

Scalable quantum information processing in spin-based architectures necessitates the a bility to reliably shuttle quantum states across extended device regions with minimal decoherence. In this work, we present a physics-informed algorithm…

量子物理 · 物理学 2025-10-09 Andrii Sokolov , Conor Power , Elena Blokhina

Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…

介观与纳米尺度物理 · 物理学 2009-11-13 Neophytos Neophytou , Abhijeet Paul , Gerhard Klimeck

We investigate the effect of quantisation of vibrational modes on a system in which the transport path is through a quantum dot mounted on a cantilever or spring such that tunnelling to and from the dot is modulated by the oscillation. We…

介观与纳米尺度物理 · 物理学 2015-06-24 Angus MacKinnon , Andrew D Armour

Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semi-empirical atomistic tight-binding model coupled…

材料科学 · 物理学 2009-11-13 Neophytos Neophytou , Abhijeet Paul , Mark Lundstrom , Gerhard Klimeck

The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components…

材料科学 · 物理学 2016-11-17 E. B. Ramayya , D. Vasileska , S. M. Goodnick , I. Knezevic

Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a…

介观与纳米尺度物理 · 物理学 2007-05-23 B. Hackens , F. Martins , T. Ouisse , H. Sellier , S. Bollaert , X. Wallart , A. Cappy , J. Chevrier , V. Bayot , S. Huant

Quantum shot noise probes the dynamics of charge transfers through a quantum conductor, reflecting whether quasiparticles flow across the conductor in a steady stream, or in syncopated bursts. We have performed high-sensitivity shot noise…

We study theoretically the quantum size effects in a one-dimensional semimetal by a Boltzmann transport equation. We derive analytic expressions for the electrical conductivity, Hall coefficient, magnetoresistance, and the thermoelectric…

介观与纳米尺度物理 · 物理学 2007-05-23 Shadyar Farhangfar

We theoretically investigate the electron transport properties for a semiconductor quantum wire containing a single finite-size attractive impurity under an external terahertz electromagnetic field illumination in the ballistic limit.…

介观与纳米尺度物理 · 物理学 2009-11-11 Guanghui Zhou , Yuan Li , Fang Cheng , Wenfu Liao
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