相关论文: Heating process in the pre-Breakdown regime of the…
The quantum Hall system can be used to study many-body physics owing to its multiple internal electronic degrees of freedom and tunability. While quantum phase transitions have been studied intensively, research on the temperature-induced…
We study quantum Hall effect within the framework of a newly proposed approach, which captures the principal results of some proposals. This can be established by considering a system of particles living on the non-commutative plane in the…
We extend the thermodynamic approach for the description of the thermal Hall effect in the vicinity of a superconducting phase transition, in the fluctuation dominated regime. We show that the Hall heat conductivity is proportional to the…
In samples used to maintain the US resistance standard the breakdown of the dissipationless integer quantum Hall effect occurs as a series of dissipative voltage steps. A mechanism for this type of breakdown is proposed, based on the…
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…
The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…
Recent experiments have studied the tunneling current between the edges of a fractional quantum Hall liquid as a function of temperature and voltage. The results of the experiment are puzzling because at "high" temperature (600-900 mK) the…
The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics.…
At low temperatures observations of the Hall resistance for Quantum Hall systems at the interface between two Hall plateaux reveal a power-law behaviour, dR_xy/dB ~ T^(-p) (with p = 0.42 +/- 0.01); changing at still smaller temperatures, T…
In the present article we investigate the influence of the contact region on the distribution of the chemical potential in integer quantum Hall samples, as well as the longitudinal and Hall resistance as a function of the magnetic field.…
The integer quantum Hall states at fillings $\nu = 0$ and $|\nu| = 1$ in monolayer graphene have drawn much attention as they are generated by electron-electron interactions. Here we explore aspects of the $\nu = 0$ and $|\nu| = 1$ quantum…
The Quantum Hall Effect (QHE) is a prototypical realization of a topological state of matter. It emerges from a subtle interplay between topology, interactions, and disorder. The disorder enables the formation of localized states in the…
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
Recently, this long-sought quantum anomalous Hall effect was realized in the magnetic topological insulator. However, the requirement of an extremely low temperature (approximately 30 mK) hinders realistic applications. Based on…
We have measured the quantum-Hall activation gaps in graphene at filling factors $\nu=2$ and $\nu=6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $\nu =6$ gap can be described by thermal excitation to broadened…
We have measured the diffusion thermopower of a quantum Hall system in a Corbino setup. A concentric electron-temperature gradient is introduced by irradiating microwaves, via a coplanar waveguide, near the outer rim of a circular mesa of a…
Low frequency AC-measurements are commonly used to determine the voltage and currents through mesoscopic devices. We calculate the effect of the alternating Hall voltage on the recorded time-averaged voltage in the presence of a top-gate…
It is shown that the observed Quantum Hall Effect in epitaxial layers of heavily doped n-type GaAs with thickness (50-140 nm) larger the mean free path of the conduction electrons (15-30 nm) and, therefore, with a three-dimensional…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…
When two separately contacted quantum Hall (QH) edge channels are brought into interaction, they can equilibrate their imbalance via scattering processes. In the present work we use a tunable QH circuit to implement a junction between…