相关论文: Donor states in modulation-doped Si/SiGe heterostr…

We theoretically study localization of quasi-two-dimensional negatively charged excitons X^- on isolated charged donors in magnetic fields. We consider donors located in a barrier at various distances L from the heteroboundary as well as…

In modern GaAs/Al$_x$Ga$_{1-x}$As heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor $\delta$-layers placed on both sides of the well. Each $\delta$-layer is…

In this study, we investigate the optical absorption within the conduction-subbands of a cylindrical GaN/AlN quantum wire. We analyze the optical absorption rate and the real part of the dielectric function for both quantum wire (QWR) and…

We study the quantum Hall states in the lowest Landau level for a single wide quantum well. Due to a separation of charges to opposite sides of the well, a single wide well can be modelled as an effective two level system. We provide…

In this paper, we address the problem of luminescence polarization in the case of nanostructures characterized by an in-plane shape asymmetry. We develop a simple semi-qualitative model revealing the mechanism that accounts for the…

Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics…

The wave function and binding energy for shallow donors in GaAs are calculated within the tight binding (TB) approach, for supercells containing up to two million atoms. The resulting solutions, coupled with a scaling law, allow…

We present a systematic and realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design. A two-valley equation is developed to describe the ground state of phosphorous donors in strained silicon…

In this work we investigate electron-impurity binding energy in GaN/HfO$_2$ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between…

In this work we obtain the exact analytical scattering solutions of a particle (electron or hole) in a semiconductor double heterojunction - potential well / barrier - where the effective mass of the particle varies with position inside the…

We study two-dimensional (2D) droplets of noninteracting electrons in a strong magnetic field, placed in a confining potential with arbitrary shape. Using semiclassical methods adapted to the lowest Landau level, we obtain near-Gaussian…

The problem of electron binding states in field of two D0 centres in semiconductive quantum well (QW) in the presence of an external longitudinal magnetic field (along the QW growth axis) is studied within the framework of zero-range…

`Hypergeometric states', which are a one-parameter generalization of binomial states of the single-mode quantized radiation field, are introduced and their nonclassical properties are investigated. Their limits to the binomial states and to…

A method for determination of bound state energies for an asymmetric quantum well with an arbitrary shape of the bottom is suggested. It is shown that how the equation determining the energy levels can be easily derived if one knows the…

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative…

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using…

Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum…

A spherical quantum dot (QD) heterosystem CdS/SiO$_2$ has been studied. Each QD has a hydrogen-like impurity in its center. Besides that, it has been accounted that a polarization trap for electron exists at the interfaces due to the…

The light reflectance and absorbance are calculated for a quantum well (QW) the width of which is comparable with the light wave length. The difference of the refraction coefficients of the quantum well and barriers is taken into account.…

The effect of quantum dot shape on the hole energy spectrum and optical properties caused by the interlevel charge transition based on the 4x4 Hamiltonian has been studied for the GaAs quantum dot in the AlAs semiconductor matrix.…