相关论文: Temperature induced shift in the pinch-off voltage…
We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…
We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems on GaAs/AlGaAs heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional non-magnetic…
We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a…
Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage…
We report electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well. Remarkably, we find that the probe configuration and sample geometry strongly affects the temperature…
It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental…
The diffusion of energy that is locally deposited into two-dimensional electron gases by Joule heating generates transverse voltages across devices with broken symmetry. For mesoscopic structures characterized by device dimensions…
We analyse phase averaging in one-dimensional interacting mesoscopic systems with several barriers and show that for incommensurate positions an independent average over several phases can be induced by finite temperature. For three strong…
We observe a maximum in the conductance of Aluminum / n-GaAs junctions at temperatures 20 mK lower than the superconducting transition temperature. This is the first observation of a non- monotonic behavior of the conductance near the…
We report experimental studies of conductance and magnetoconductance of GaAs/AlGaAs quantum well structures where both wells and barriers are doped by acceptor impurity Be. Temperature dependence of conductance demonstrate a non-monotonic…
We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at…
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…
Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…
The zero-field temperature-dependence of the resistivity of two-dimensional holes are observed to exhibit two qualitatively different characteristics for a fixed carrier density for which only the metallic behavior of the so-called…
This review presents an overview of the thermal properties of mesoscopic structures. The discussion is based on the concept of electron energy distribution, and, in particular, on controlling and probing it. The temperature of an electron…
We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…
Electron transport in suspended and non-suspended GaAs point contacts (PCs) of different widths is experimentally studied. The superballistic contribution to the conductance, that demonstrates a distinctive quadratic dependence on the PC…
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…
The conductance coefficients of disordered mesoscopic devices with $n$ probes are investigated within the noninteracting electron approximation at zero temperature. The probes are eliminated from the theoretical description at the expense…