相关论文: Sub-wetting layer continuum states in quantum dot …
Single-electron capacitance spectroscopy precisely measures the energies required to add individual electrons to a quantum dot. The spatial extent of electronic wavefunctions is probed by investigating the dependence of these energies on…
Semiconductor quantum dots embedded in photonic-crystal nanostructures have been the subject of intense study. In this context, quantum dots are often considered to be simple two-level emitters, i.e., the complexities arising from the…
We theoretically investigate polarization-entangled photon generation by using a semiconductor quantum dot embedded in a microcavity. The entangled states can be produced by the application of two cross-circularly polarized laser fields.…
A consistent semiquantitative theoretical analysis of electronic Raman scattering from many-electron quantum dots under resonance excitation conditions has been performed. The theory is based on random-phase-approximation-like wave…
Techniques to control the quantum state of light play a crucial role in a wide range of fields, from quantum information science to precision measurements. While for electrons in solid state materials complex quantum states can be created…
Computer simulations with Synopsys' Sentaurus TCAD of opto-electrical characteristics of separate-confinement heterostructure laser based on AlGaAs are used as an example to study the role of the width and depth of Quantum Well (QW) active…
We report on high-resolution photoluminescence (PL) spectroscopic and microscopic study of laterally coupled InAs/GaAs self-assembled quantum dots by using a low-temperature near-field scanning optical microscope. We have observed slightly…
The effects of random distribution of magnetic impurities with concentration $x$ in a semiconductor alloy multilayer at a paramagnetic temperature are investigated by means of coherent potential approximation and tight-binding model. The…
Considering screeening of electron scattering interactions in terms of the finite-temperature STLS theory and solving the linearized Boltzmann equation (with no appeal to a relaxation time approximation), we present a theoretical analysis…
A detailed analysis of the electro-optical response of single as well as coupled semiconductor quantum dots is presented. This is based on a realistic ---i.e., fully tridimensional--- description of Coulomb-correlated few-electron states,…
We have studied the relative adhesion (the wetting) of dislocation-free three-dimensional islands belonging to an array of islands to the wetting layer in Stranski-Krastanov growth mode. The array has been simulated as a chain of islands in…
Electronic states and transport phenomena in semiconductor quantum dots are studied theoretically. Taking account of the electron-electron Coulomb interaction by the exact diagonalization method, the ground state and low-lying excited…
Optical transitions in a semiconductor quantum dot are theoretically investigated, with emphasis on the coupling to longitudinal optical phonons, and including excitonic effects. When limiting to a finite number of $m$ electron and $n$ hole…
Using the Feynman-Pines diagram technique, the energy spectrum of localized quasi-particles interacting with polarization phonons is calculated and analyzed in the wide range of energies at the finite temperature of the system. It is…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…
The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A…
We discuss generation of subwavelength optical barriers on the scale of tens of nanometers, as conservative optical potentials for cold atoms. These arise from non-adiabatic corrections to Born-Oppenheimer potentials from dressed `dark…
For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a…
We theoretically study the subband structure of single Si $\delta$-doped GaAs inserted in a quantum well and subject to an electric field applied along the growth direction. We use an efficient self-consistent procedure to solve…
Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures.…