Electro-optical properties of semiconductor quantum dots: Application to quantum information processing
摘要
A detailed analysis of the electro-optical response of single as well as coupled semiconductor quantum dots is presented. This is based on a realistic ---i.e., fully tridimensional--- description of Coulomb-correlated few-electron states, obtained via a direct-diagonalization approach. More specifically, we investigate the combined effect of static electric fields and ultrafast sequences of multicolor laser pulses in the few-carrier, i.e., low-excitation, regime. In particular, we show how the presence of a properly tailored static field may give rise to significant electron-hole charge separation; these field-induced dipoles, in turn, may introduce relevant exciton-exciton couplings, which are found to induce significant ---both intra- and inter-dot--- biexcitonic splittings. We finally show that such few-exciton systems constitute an ideal semiconductor-based hardware for an all optical implementation of quantum information processing.
引用
@article{arxiv.cond-mat/0108334,
title = {Electro-optical properties of semiconductor quantum dots: Application to quantum information processing},
author = {Eliana Biolatti and Irene D'Amico and Paolo Zanardi and Fausto Rossi},
journal= {arXiv preprint arXiv:cond-mat/0108334},
year = {2009}
}
备注
28 pages, 16 Postscript figures. submitted to Phys. Rev. B