Electronic States and Transport Phenomena in Quantum Dot Systems
Abstract
Electronic states and transport phenomena in semiconductor quantum dots are studied theoretically. Taking account of the electron-electron Coulomb interaction by the exact diagonalization method, the ground state and low-lying excited states are calculated as functions of magnetic field. Using the obtained many-body states, we discuss the temperature dependence of the conductance peaks in the Coulomb oscillation. In the Coulomb blockade region, elastic and inelastic cotunneling currents are evaluated under finite bias voltages. The cotunneling conductance is markedly enhanced by the Kondo effect. In coupled quantum dots, molecular orbitals and electronic correlation influence the transport properties.
Cite
@article{arxiv.cond-mat/0101345,
title = {Electronic States and Transport Phenomena in Quantum Dot Systems},
author = {Mikio Eto},
journal= {arXiv preprint arXiv:cond-mat/0101345},
year = {2009}
}
Comments
Review paper of our work, to appear in Proc. Int. Symp. on Formation, Physics and Device Application of Quantum Dot Structures (QDS 2000, Sapporo, Japan), Jpn. J. Appl. Phys. [11 pages, 6 figures]