相关论文: Spin Injection: Interface Resistance in Fe/Semicon…
Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode fitted with a spin injecting contact (a spin-LED) allows for a direct determination of the spin polarization of the injected carriers.…
The interface-induced magnetization damping of thin ferromagnetic films in contact with normal-metal layers is calculated from first principles for clean and disordered Fe/Au and Co/Cu interfaces. Interference effects arising from coherent…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…
Spin-resolved photoelectron spectroscopy (PES) is a major experimental probe of chirality-induced spin selectivity (CISS), yet it remains unclear whether the measured spin polarization reflects molecular chirality itself or the broader…
Josephson devices with ferromagnetic barriers have been widely studied. Much less is known when the ferromagnetic layer is insulating. In this manuscript we investigate the transport properties of superconductor-ferromagnetic…
First-principles density functional calculations demonstrate that a spin-polarized two-dimensional conducting state can be realized at the interface between two non-magnetic band insulators. The (001) surface of the diamagnetic insulator…
By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge…
Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable…
We use a fully relativistic layer Green's functions approach to investigate spin-dependent tunneling through a symmetric indirect band gap barrier like GaAs/AlAs/GaAs heterostructure along [100] direction. The method is based on Linear…
Decrease of spin polarization in spintronics devices under an application of bias voltage is one of currently important problems which should be solved. We reveal unprecedented robustness of spin polarization in multi-layer graphene spin…
The Schottky barrier height (SBH) is mapped with nanoscale resolution at pure Au/Si(001) and mixed Au/Ag/Si(001) interfaces utilizing ballistic electron emission microscopy (BEEM) by acquiring and fitting spectra every 11.7 nm over a 1…
We discuss the surface impedance (Z=R-iX) of a normal-metal/superconductor proximity structure taking into account the spin-dependent potential at the junction interface. Because of the spin mixing transport at the interface, odd-frequency…
Insertion of a resistive contact between a ferromagnetic metal and a semiconductor microstructure is of critical importance for achieving efficient spin injection into a semiconductor. However, the equations of the diffusion theory are…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
We investigate 1, 2, 3, and 4 monolayers of iron grown on the (001) surface of ZnSe using spin density functional theory, plane-wave expansion, and ultrasoft pseudopotentials. An ideal structure of the interface is plausible due to the very…
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and…
We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions…
Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron…
We analyze BEEM experiments. At low temperatures and low voltages, near the threshold value of the Schottky barrier, the BEEM current is dominated by the elastic component. Elastic scattering by the lattice results in the formation of…
The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is…