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相关论文: Ferromagnetic imprinting of spin polarization in a…

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A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…

介观与纳米尺度物理 · 物理学 2007-05-23 J. P. McGuire , C. Ciuti , L. J. Sham

We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…

凝聚态物理 · 物理学 2009-11-07 J. D. Albrecht , D. L. Smith

We study the evolution and distribution of non-equilibrium electron spin polarization in n-type semiconductors within the two-component drift-diffusion model in an applied electric field. Propagation of spin-polarized electrons through a…

介观与纳米尺度物理 · 物理学 2010-10-12 Yuriy V. Pershin , Vladimir Privman

We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved…

其他凝聚态物理 · 物理学 2009-11-11 V. V. Osipov , A. G. Petukhov , V. N. Smelyanskiy

We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…

材料科学 · 物理学 2009-11-10 A. M. Bratkovsky , V. V. Osipov

New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…

材料科学 · 物理学 2007-05-23 A. M. Bratkovsky , V. V. Osipov

We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…

材料科学 · 物理学 2009-11-11 V. V. Osipov , A. M. Bratkovsky

It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…

介观与纳米尺度物理 · 物理学 2007-05-23 V. L. Korenev

We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$…

其他凝聚态物理 · 物理学 2007-05-23 A. G. Petukhov , V. N. Smelyanskiy , V. V. Osipov

We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…

材料科学 · 物理学 2009-11-10 V. V. Osipov , A. M. Bratkovsky

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…

凝聚态物理 · 物理学 2009-11-10 J. D. Albrecht , D. L. Smith

We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the…

材料科学 · 物理学 2009-11-10 J. Stephens , J. Berezovsky , J. P. McGuire , L. J. Sham , A. C. Gossard , D. D. Awschalom

High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…

介观与纳米尺度物理 · 物理学 2010-09-22 Yuriy V. Pershin , Vladimir Privman

The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…

介观与纳米尺度物理 · 物理学 2007-05-23 Y. Kato , R. C. Myers , A. C. Gossard , D. D. Awschalom

We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…

其他凝聚态物理 · 物理学 2007-05-23 V. V. Osipov , V. N. Smelyanskiy , A. G. Petukhov

The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…

介观与纳米尺度物理 · 物理学 2007-05-23 A. T. Filip , B. H. Hoving , F. J. Jedema , B. J. van Wees

In an inhomogeneously doped magnetic semiconductor, an interplay between an equilibrium magnetization and injected nonequilibrium spin leads to the spin-voltaic effect--a spin analogue of the photo-voltaic effect. By reversing either the…

凝聚态物理 · 物理学 2007-05-23 Igor Zutic , Jaroslav Fabian

We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…

材料科学 · 物理学 2007-05-23 Dan Csontos , Sergio E. Ulloa

We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge…

介观与纳米尺度物理 · 物理学 2010-06-22 Yue Yu , Jinbin Li , S. T. Chui

A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…

材料科学 · 物理学 2007-05-23 R. Lipperheide , U. Wille
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