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相关论文: Optical conductivity of one-dimensional doped Hubb…

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The frequency-dependent conductivity is studied for the one-dimensional Hubbard model, using a selection rule, the Bethe ansatz, and symmetries associated with conservation laws. For densities where the system is metallic the absorption…

强关联电子 · 物理学 2009-10-31 J. M. P. Carmelo , N. M. R. Peres , P. D. Sacramento

The frequency-dependent conductivity is studied for both the one-dimensional Hubbard model and a model of spinless fermions, using a selection rule, the Bethe ansatz energy eigenstates, and conformal invariance. For densities where the…

凝聚态物理 · 物理学 2007-05-23 J. M. P. Carmelo , P. D. Sacramento , N. M. R. Peres , D. Baeriswyl

We study photoinduced optical responses of one-dimensional strongly correlated electron systems. The optical conductivity spectra are calculated for the ground state and a photoexcited state in the one-dimensional Hubbard model at half…

强关联电子 · 物理学 2009-11-11 Nobuya Maeshima , Kenji Yonemitsu

The optical conductivity of the one-band Hubbard model is calculated using the 'Dynamical Cluster Approximation' implementation of dynamical mean field theory for parameters appropriate to high temperature copper-oxide superconductors. The…

强关联电子 · 物理学 2009-10-29 Nan Lin , Emanuel Gull , A. J. Millis

We combine well-controlled analytical and numerical methods to determine the optical conductivity of the one-dimensional Mott-Hubbard insulator at zero temperature. A dynamical density-matrix renormalization group method provides the entire…

强关联电子 · 物理学 2009-10-31 E. Jeckelmann , F. Gebhard , F. H. L. Essler

We study the transfer of spectral weight in the optical spectra of a strongly correlated electron system as a function of temperature and interaction strength. Within a dynamical mean field theory of the Hubbard model that becomes exact in…

凝聚态物理 · 物理学 2009-10-28 M. J. Rozenberg , G. Kotliar , H. Kajueter , G. A. Thomas , D. H. Rapkine , J. M. Honig , P. Metcalf

We study electric transport near the Mott metal-insulator transition. Optical conductivity of the half-filled Hubbard model on a triangular lattice is calculated based on a cellular dynamical mean field theory including vertex corrections…

强关联电子 · 物理学 2015-06-03 Toshihiro Sato , Kazumasa Hattori , Hirokazu Tsunetsugu

The doped Mott insulator in one dimension has been studied based on the phase Hamiltonian with the Umklapp scattering process, in which the charge degree of freedom is described by the quantum sine-Gordon model. The well-known equivalence…

凝聚态物理 · 物理学 2009-10-28 Michiyasu Mori , Hidetoshi Fukuyama

We obtain holographic realizations for systems that have strong similarities to Mott insulators and supersolids, after examining the ground states of Einstein-Maxwell-scalar systems. The real part of the AC conductivity has a hard gap and a…

高能物理 - 理论 · 物理学 2015-10-05 Elias Kiritsis , Jie Ren

We have investigated the charge dynamics of VO2 by optical reflectivity measurements. Optical conductivity clearly shows a metal-insulator transition. In the metallic phase, a broad Drude-like structure is observed. On the other hand, in…

强关联电子 · 物理学 2009-11-11 K. Okazaki , S. Sugai , Y. Muraoka , Z. Hiroi

Charge dynamics of the two-dimensional Hubbard model is investigated. Lancz$\ddot{\rm o}$s-diagonalization results for the optical conductivity and the Drude weight of this model are presented. Near the Mott transition, large incoherence…

凝聚态物理 · 物理学 2009-10-31 Hiroki Nakano , Masatoshi Imada

The optical conductivity, $\sigma(\omega)$, of the two dimensional one-band Hubbard model is calculated at finite temperature using exact diagonalization techniques on finite clusters. The in-plane d.c. resistivity, $\rho_{ab}$, is also…

凝聚态物理 · 物理学 2009-10-22 Jose A. Riera , Elbio Dagotto

We study the Cu and O spectral density of states and the optical conductivity of CuO_2 planes using an effective generalized one-band Hubbard model derived from the extended three-band Hubbard model. We solve exactly a square cluster of 10…

超导电性 · 物理学 2009-10-30 M. E. Simon , A. A. Aligia , E. R. Gagliano

We consider the optical conductivity in the one dimensional Hubbard model in the metallic phase close to half filling. In this regime most of the spectral weight is located at frequencies above an energy scale $E_{\rm opt}$ that tends…

强关联电子 · 物理学 2016-05-04 Thomas Veness , Fabian H. L. Essler

We consider the optical conductivity $\sigma_1(\omega)$ in the metallic phase of the one-dimensional Hubbard model. Our results focus on the vicinity of half filling and the frequency regime around the optical gap in the Mott insulating…

The elucidation of nonequilibrium states in strongly correlated systems holds the key to emergence of novel quantum phases. The nonequilibrium-induced insulator-to-metal transition is particularly interesting since it reflects the…

强关联电子 · 物理学 2022-08-05 Kazuya Shinjo , Shigetoshi Sota , Takami Tohyama

We investigate changes in the optical conductivity of doped Mott insulators by tuning ultrashort pump pulses to target either the Drude or low-energy absorption regions. Using a hole-doped two-leg Hubbard ladder and a four-leg t-J ladders,…

强关联电子 · 物理学 2026-01-19 Sumal Chandra , Kazuya Shinjo , Shigetoshi Sota , Seiji Yunoki , Takami Tohyama

We study electric transport near the Mott metal-insulator transition in a triangular-lattice Hubbard model at half filling. We calculate optical conductivity $\sigma(\omega)$ based on a cellular dynamical mean field theory including vertex…

强关联电子 · 物理学 2015-06-12 Toshihiro Sato , Kazumasa Hattori , Hirokazu Tsunetsugu

The optical conductivity and the spectral weight of four topological insulators with increasing chemical compensation (Bi2Se3, Bi2-xCaxSe3, Bi2Se2Te, Bi2Te2Se) have been measured from 5 to 300 K and from sub-THz to visible frequencies. The…

材料科学 · 物理学 2012-09-13 P. Di Pietro , F. M. Vitucci , D. Nicoletti , L. Baldassarre , P. Calvani , R. Cava , Y. S. Hor , U. Schade , S. Lupi

The doping and temperature dependent conductivity of electron-doped cuprates is analysed. The variation of kinetic energy with doping is shown to imply that the materials are approximately as strongly correlated as the hole-doped materials.…

强关联电子 · 物理学 2015-01-09 A. J. Millis , A. Zimmers , R. P. S. M. Lobo , N. Bontemps
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