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相关论文: Epitaxial Growth of Thin Films -- a Statistical Me…

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We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray…

Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into…

材料科学 · 物理学 2015-09-22 A. S. Bhattacharyya , S. Kumar , S. Jana , P. Y. Kommu , K. Gaurav , S. Prabha , V. S. Kujur , P. Bharadwaj

The epitaxial growth of complex oxide thin films provide three avenues to generate unique properties: the ability to influence the 3-dimensional structure of the film, the presence of a surface, and the generation of an interface. In all…

材料科学 · 物理学 2010-05-31 N. J. C. Ingle , A. Yuskauskas , R. Wicks , M. Paul , S. Leung

The retraction of thin films, as described by the Taylor-Culick (TC) theory, is subject to widespread debate, particularly for films at the nanoscale. We use non-equilibrium molecular dynamics simulations to explore the validity of the…

In this paper we present a generalization of a simple solid-on-solid epitaxial model of thin films growth, when surface morphology anisotropy is provoked by anisotropy in model control parameters: binding energy and/or diffusion barrier.…

凝聚态物理 · 物理学 2007-05-23 K. Malarz , A. Z. Maksymowicz

A static variational model for shape formation in heteroepitaxial crystal growth is considered. The energy functional takes into account surface energy, elastic misfit-energy and nucleation energy of dislocations. A scaling law for the…

偏微分方程分析 · 数学 2024-03-21 Lukas Abel , Janusz Ginster , Barbara Zwicknagl

Magnetron sputtering has also been used to deposit thin films of some materials and it has significant technological importance. A modeling on deposition of epitaxial thin films of Yttrium Stabilized Zirconia (YSZ) was done the diffusion of…

材料科学 · 物理学 2016-11-24 A. S Bhattacharyya , P. Prabhakar , R. P. Kumar , S. Sharma , S. K. Raj , R. Ratn , P. Kommu

The article consists of four sections all dealing with the computational modeling of the sputtering process. The first section deals with the difference in Bismuth atomic layer deposition at different polar angle and ion flounce. In the…

In the present contribution we review basic mathematical results for three physical systems involving self-organising solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting,…

其他凝聚态物理 · 物理学 2010-10-15 Uwe Thiele

Thin films are ubiquitous, with uses ranging from optoelectronics to antibacterial coatings. Unfortunately, precisely quantifying how the choice of substrate influences epitaxial growth remains an unsolved problem. Here, a novel thin film…

材料科学 · 物理学 2021-01-26 Kai Trepka

A stochastic model is used to assess the effect of external parameters on the development of submerged biofilms on smooth and rough surfaces. The model includes basic cellular mechanisms, such as division and spreading, together with an…

软凝聚态物质 · 物理学 2024-01-17 David Rodriguez , Baldvin Einarsson , Ana Carpio

Epitaxial films have the potential to be used as model systems for fundamental investigations on the martensitic transformation in binary NiTi. In this paper, we discuss growth of binary NiTi thin films on single crystalline MgO substrates.…

(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray…

材料科学 · 物理学 2021-05-26 Santosh Kumar Yadav , Subhabrata Dhar

The random deposition model must be enriched to reflect the variety of surface roughness due to some material characteristics of the film growing by vacuum deposition or sputtering. The essence of the computer simulation in this case is to…

凝聚态物理 · 物理学 2007-05-23 K. Malarz , A. Z. Maksymowicz

In this paper we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows to understand many experiments of thin film deposition. In the first…

This paper concerns new continuum phenomenological model for epitaxial thin film growth with three different forms of the Ehrlich-Schwoebel current. Two of these forms were first proposed by Politi and Villain [1996] and then studied by…

数值分析 · 数学 2015-08-20 Wenbin Chen , Zhenhua Chen , Jin Cheng , Yanqiu Wang

A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed.…

材料科学 · 物理学 2016-02-23 H. Tetlow , J. Posthuma de Boer , I. J. Ford , D. D. Vvedensky , J. Coraux , L. Kantorovich

We report on a combined structural and electronic analysis of niobium ultrathin films (from 2 to 10 nm) deposited in ultra-high vacuum on atomically flat R-plane sapphire wafers. A textured polycrystalline morphology is observed for the…

介观与纳米尺度物理 · 物理学 2012-07-03 Cécile Delacour , Luc Ortega , Marc Faucher , Thierry Crozes , Thierry Fournier , Bernard Pannetier , Vincent Bouchiat

Numerical Simulations are employed to create amorphous nano-films of a chosen thickness on a crystalline substrate which induces strain on the film. The films are grown by a vapor deposition technique which was recently developed to create…

Controlling thin film formation is technologically challenging. The knowledge of physical properties of the film and of the atoms in the surface vicinity can help improve control over the film growth. We investigate the use of the…

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