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We present an extensive density functional theory study of the electronic, magnetic and transport properties of GaAs and AlAs digital ferromagnetic heterostructures. These can be obtained by $\delta$-doping with Mn the GaAs layers of a…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Sanvito

We report on a theoretical study of the electronic, optical and magneto-optical properties of digital ferromagnetic hetero-structures based on $Mn$ $\delta$--doped $GaAs$. We consider different structures corresponding to $Mn$ contents…

材料科学 · 物理学 2015-02-25 Patrizia Rosa , Davide Sangalli , Giovanni Onida , Alberto Debernardi

Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving…

We propose and investigate the properties of a digital ferromagnetic heterostructure (DFH) consisting of a $\delta$-doped layer of Mn in Si, using \textit{ab initio} electronic-structure methods. We find that (i) ferromagnetic order of the…

材料科学 · 物理学 2009-11-11 M. C. Qian , C. Y. Fong , Kai Liu , Warren E. Pickett , J. E. Pask , L. H. Yang

The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs.…

材料科学 · 物理学 2017-03-08 J. Kanski , L. Ilver , K. Karlsson , I. Ulfat , M. Leandersson , J. Sadowski , I. Di Marco

We present results of a combined density functional and many-body calculations for the electronic and magnetic properties of the defect-free digital ferromagnetic heterostructures obtained by doping GaAs with Cr and Mn. While local density…

材料科学 · 物理学 2016-08-14 F. Beiuşeanu , C. Horea , E. -V. Macocian , T. Jurcuţ , L. Vitos , L. Chioncel

We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $\delta$-layer of Mn, where the charge carriers are confined within a quantum well and…

介观与纳米尺度物理 · 物理学 2013-05-29 Vikram Tripathi , Kusum Dhochak , B. A. Aronzon , V. V. Rylkov , A. B. Davydov , Bertrand Raquet , Michel Goiran , K. I. Kugel

We have studied in details the electronic structure and magnetism in M (Mn and Cr) doped semiconducting half-Heusler compounds FeVSb, CoTiSb and NiTiSn (XM$_{x}$Y$_{1-x}$Z) in a wide concentration range using local-spin density functional…

材料科学 · 物理学 2007-05-23 B. R. K. Nanda , I. Dasgupta

Antiferromagnetic interlayer coupling in dilute magnetic semiconductor superlattices could result in the realisation of large magnetoresistance effects analogous to the giant magnetoresistance seen in metallic multilayer structures. In this…

材料科学 · 物理学 2010-10-29 A. D. Giddings , T. Jungwirth , B. L. Gallagher

Magneto-transport measurements of ferromagnetic MnAs epilayers grown by molecular beam epitaxy reveal the presence of both positive and negative charge carriers. Electrical transport at high temperatures is dominated by holes, and at low…

材料科学 · 物理学 2009-11-07 J. J. Berry , S. J. Potashnik , S. H. Chun , K. C. Ku , P. Schiffer , N. Samarth

Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid…

介观与纳米尺度物理 · 物理学 2019-01-10 Kaushini Wickramasinghe , William Mayer , Joseph Yuan , Tri Nguyen , Lucy Jiao , Vladimir Manucharyan , Javad Shabani

The interlayer coupling between (Ga,Mn)As ferromagnetic layers in all-semiconductor superlattices is studied theoretically within a tight-binding model, which takes into account the crystal, band and magnetic structure of the constituent…

材料科学 · 物理学 2009-11-11 P. Sankowski , P. Kacman

We describe a systematic study of the synthesis, microstructure and magnetization of hybrid ferromagnet-semiconductor nanomaterials comprised of MnAs nanoclusters embedded in a p-doped GaAs matrix. These samples are created during the in…

材料科学 · 物理学 2015-03-19 D. W. Rench , P. Schiffer , N. Samarth

We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow…

介观与纳米尺度物理 · 物理学 2024-03-13 D. Q. Wang , D. Reuter , A. D. Wieck , A. R. Hamilton , O. Klochan

Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si…

Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer $\delta$-doping of {\em interstitial} Mn (Mn$_{\mathrm int}$) are half-metallic. For Mn$_{\mathrm int}$…

材料科学 · 物理学 2007-05-23 Hua Wu , Peter Kratzer , Matthias Scheffler

We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…

材料科学 · 物理学 2008-06-27 Pham Nam Hai , Yusuke Sakata , Masafumi Yokoyama , Shinobu Ohya , Masaaki Tanaka

We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a…

We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin…

介观与纳米尺度物理 · 物理学 2009-10-31 T. Jungwirth , W. A. Atkinson , B. H. Lee , A. H. MacDonald

We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn {\delta}-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation…

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