相关论文: Ab-initio transport theory for digital ferromagnet…

The resistivity model as a function of temperature and ionization energy (doping) is derived with further confinements from spin-disorder scattering in ferromagnetic phase. Magnetization and polaronic effects capture the mechanism of both…

The magnetism in 12.5% and 25% Mn delta-doped cubic GaN has been investigated using the density-functional theory calculations. The results show that the single-layer delta-doping and half-delta-doping structures show robust ground state…

We analyze the influence of the Fermi surface (FS) shape on magnetotransport properties, particularly on the Hall effect in the MnAs compound. It has been observed in MnAs films evidence of opposite conduction polarities for different…

We discuss theoretically how electrons confined to two dimensions in a delta-doped heterostructure can arrange themselves in a droplet-like spatial distribution due to disorder and screening effects when their density is low. We apply this…

Altermagnets (AMs) - magnetic materials that have spin-split bandstructure with zero net spin polarization can be classified as weak or strong depending upon the strength of altermagnetic term in the Hamiltonian. We theoretically…

The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted…

Unlike the ferropnictide superconductors, which crystallize in a tetragonal crystal structure, binary FeAs forms in an orthorhombic crystal structure, where the local atomic environment resembles a highly distorted variant of the FeAs4…

Superlattice engineering is a powerful way to tune the transport properties of a material. In this work we show that magnetotransport can be modified by superlattices in 3D materials based on the relative symmetry between the Fermi-surface…

The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multi-quantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for…

We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity…

Electron transport in GaN/AlxGa1-xN superlattices is investigated using a single particle Monte Carlo approach. To establish the band structure required GaN, AlN and their ternary alloy are investigated using a single electron Monte Carlo…

The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed and consist of periodically arranged alternate layers:…

Quantitative differences of Lagrange multipliers between standard Fermi-Dirac statistics (FDS) and Ionization energy ($E_I$) based FDS (iFDS) are analyzed in detail to obtain reasonably accurate interpretations without violating the…

We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak…

Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and…

Narrow-gap higher mobility semiconducting alloys In_{1-x}Mn_{x}Sb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In_{0.98}Mn_{0.02}Sb was detected by…

Coherent transport in Nb/GaAs superconductor-semiconductor microstructures is presented. The structures fabrication procedure is based on delta-doped layers grown by molecular-beam-epitaxy near the GaAs surface, followed by an As cap layer…

Applying the dynamical coherent potential approximation to a simple model, we have systematically studied the carrier states in $A_{1-x}$Mn$_xB$-type diluted magnetic semiconductors (DMS's). The model calculation was performed for three…

Topological semimetals are renowned for exhibiting large, unsaturated magnetoresistance arising from ultrahigh carrier mobility and electron-hole compensation. However, such behaviors remain poorly understood in iron-based superconductors…

We show that Mn_2VAl is a compound for which the generalized gradient approximation (GGA) to the exchange-correlation functional in density functional theory makes a qualitative change in predicted behavior compared to the usual local…