相关论文: Current-Driven Magnetic Memory with Tunable Magnet…
Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system…
The transport properties of Nb/CuMn multilayers with a regular array of electron beam lithography obtained antidots have been measured at different temperatures in the presence of external perpendicular magnetic fields. Hysteretical I-V…
Non-volatile multivalued memory effects caused by magnetic fields, currents, and voltage pulses are studied in Nd_{0.65}Ca_{0.35}MnO_3 and (Nd_{1-y}Sm_{y})_{0.5}Sr_{0.5}MnO_3 (y=0.75) single crystals in the hysteretic region between…
Two-level fluctuations of the magnetization state of pseudo spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (~40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10^7…
We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel consisting of polycrystalline MoS2 films with grain sizes…
Magnetic nanodevices usually include a free layer whose configuration can be changed by spin-polarized current via the spin transfer effect, and a fixed reference layer. Here, we demonstrate that the roles of the free and the reference…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
Current-induced switching from metallic to insulating state is observed in phase-separated states of (La_{1-y}Pr_y)_{0.7}Ca_{0.3}MnO_3 (y=0.7) and Nd_{0.5}Ca_{0.5}Mn_{1-z}Cr_zO_3 (z=0.03) crystals. Application of magnetic fields to this…
[Cu$^{\mathrm{II}}$(enpnen)]$_{2}$[Mo$^{\mathrm{IV}}$(CN)$_{8}$]$\cdot$7H$_{2}$O (enpnen = N,N$^\prime$-bis(2-aminoethyl)-1,3-propane-diamine) molecular cluster compound was subject to a series of irradiations with the light of 405 nm. On…
We fabricated a current-perpendicular-to-plane pseudo-spin-valve nanopillar comprising a thick and a thin Co rings with deep submicron lateral sizes. The dc current can effectively induce the flux-closure vortex states in the rings with…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…
The current dependence of the switching barrier for spin torque switching of an in-plane magnetized ferromagnet was studied. Two scaling currents, I_{c}$ and I_{c}^{*}(>I_{c}), were introduced to distinguish the magnetization stability. In…
Recent research on CoPd alloys with perpendicular magnetic anisotropy (PMA) has suggested that they might be useful as the pinning layer in CoFeB/MgO-based perpendicular magnetic tunnel junctions (pMTJ's) for various spintronic applications…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
We demonstrate the remnant presence of {\em initial} correlations in the {\em steady-state} electrical current flowing between low-dimensional interacting leads. The leads are described as Luttinger liquids and electrons can tunnel via a…
In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…
The stability is analyzed of the equilibrium configurations of a magnetic junction with a free layer that has cubic symmetry and two anisotropy axes in the layer plane. Different variants of the switching between various configurations are…
We report on muon-spin rotation/relaxation (\muSR), electrical resistivity, magnetization and differential scanning calorimetry measurements performed on a high-quality single crystal of Cs_0.8(FeSe_0.98)_2. Whereas our transport and…
In the admixed Nd0.75Ho0.25Al2 system, magnetic moments of Nd and Ho occupying the same crystallographic site are antiferromagnetically coupled and the chosen stoichiometry displays a magnetic compensation behavior (Tcomp of about 24 K) in…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…