相关论文: Current-Driven Magnetic Memory with Tunable Magnet…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
We have carried out detailed experimental studies of the exchange bias effect of a series of CoO/Co(111) textured bilayers with different Co layer thickness, using the magneto-optical Kerr effect, SQUID magnetometry, polarized neutron…
We review experimental and theoretical work on current-driven switching of magnetisation and present quantitative results for the Co/Cu/Co (001) system.
A study of magneto-transport through quantum dots is presented. The model allows to analyze tunnelling both from bulk-like contacts and from 2D accumulation layers. The fine features in the I-V characteristics due to the quantum dot states…
A hybrid system which consists of a superconducting (SC) Pb film (100 nm thickness) containing $\sim$1 vol% single domain ferromagnetic (FM) Co particles of mean-size $\sim$4.5 nm reveal unusual magnetic properties: (i) a controlled…
We report on the basic properties of recently observed magnetic field resonance, induced time dependent oscillation, and hysteresis effects in the current flowing through two weakly coupled vertical quantum dots at high source-drain bias…
Scalable memories that can match the speeds of superconducting logic circuits have long been desired to enable a superconducting computer. A superconducting loop that includes a Josephson junction can store a flux quantum state in…
In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting…
The inertia of trapping and detrapping of nonequilibrium charge carriers affects the electrochemical and transport properties of both bulk and nanoscopic structures in a very peculiar way. An emerging memory response with a hysteresis in…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…
We have synthesized Ga-doped Cr2O3 system with compositions Cr1.45Ga0.55O3 and Cr1.17Ga0.83O3 by chemical co-precipitation route and post annealing at 800^C. The samples have been stabilized in rhombohedral crystal structure with space…
Current induced switching in Co/Cu/Co trilayers is described in terms of ab-initio determined magnetic twisting energies and corresponding sheet resistances. In viewing the twisting energy as an energy flux the characteristic time thereof…
Ion concentration polarization (CP, current-induced concentration gradient adjacent to a charge-selective interface) has been well studied for single-phase mixed conductors (e.g., liquid electrolyte), but multiphase CP has been rarely…
Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMM's two spin-state of stored information…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
CoSe$_2$O$_5$ has a crystal structure consisting of zig-zag chains of edge shared CoO$_6$ octahedra running along the c axis, with the chains separated by Se$_2$O$_5^{2-}$ units. Magnetic susceptibility measurements indicate a transition at…
The co-tunneling current through a two-level doubly occupied quantum dot weakly coupled to ferromagnetic leads is calculated in the Coulomb blockade regime. It is shown that the dependence of the differrential conductance on applied voltage…
We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to…