相关论文: Memory Effect in Silicon Nitride in Silicon Device…
Thin films of amorphous (a)-TiO2 are ubiquitous as photocatalysts, protective coatings, photoanodes and in memory application, where they are exposed to excess electrons and holes. We investigate trapping of excess electrons and holes in…
Silicon is a promising anode material for next-generation lithium-ion batteries. However, the volume change and the voltage hysteresis during lithiation and delithiation are two substantial drawbacks to their lifetime and performance. We…
Silicon-based ion trap chips can benefit from existing advanced fabrication technologies, such as multi-metal layer techniques for two-dimensional architectures and silicon photonics for the integration of on-chip optical components.…
Atomic cells made by anodically bonding silicon and borosilicate glasses are widely used in atomic devices. One inherent problem in these cells is that the silicon material blocks beams with wavelengths shorter than 1000 nm, which limits…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
Comprehensive understanding of the world's most energy efficient powerful computer, the human brain, is an elusive scientific issue. Still, already gained knowledge indicates memristors can be used as a building block to model the brain. At…
There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage…
The charge transport mechanism of electron via traps in amorphous SiO$_2$ has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and optical trap energies $W_\mathrm{t}=1.6$ eV,…
Using ab initio density functional total energy and molecular dynamics simulations, we study the effects of various forms of nitrogen post deposition anneal (PDA) on the electric properties of hafnia in the context of its application as a…
In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk…
We present a theory for the memory effect in electron glasses. In fast gate voltage sweeps it is manifested as a dip in the conductivity around the equilibration gate voltage. We show that this feature, also known as anomalous field effect,…
In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as bottom electrode. The RRAM devices consisted of…
Today's supercapacitor energy storages are typically discrete devices aimed for printed boards and power applications. The development of autonomous sensor networks and wearable electronics and the miniaturisation of mobile devices would…
Single-electron effects have been widely investigated as a typical physical phenomenon in nanoelectronics. The single-electron effect caused by trap sites has been observed in many devices. In general, traps are randomly distributed and not…
Amorphous hydrogenated silicon nitride ($\textit{a}$-SiN$_\mathrm{\textit{x}}$:H) thin films irradiated with 100 MeV Ni$^{7+}$ results in the formation of continuous ion track structures at the lower fluence of $5\times{10^{12}}$…
Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor…
We report a bistable organic memory made of a single organic layer embedded between two electrodes, we compare to the organic/metal nanoparticle/organic tri-layers device [L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80, 2997 (2002)]. We…