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In the present paper metal-insulator transition is studied in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. Single-particle Green function and energy spectrum of electron system are calculated.…

强关联电子 · 物理学 2015-06-25 Leonid Didukh , Vasyl Hankevych

The phenomenon of Anderson localization wherein non-interacting electrons are localized by quenched impurities is a subject matter that has been extremely well studied. However, localization transition under the combined influence of…

强关联电子 · 物理学 2018-04-24 Shashikant Singh Kunwar , Prabuddha B. Chakraborty , R. Narayanan

We discuss a metal-insulator transition caused by random couplings of magnetic moments in itinerant systems. An analytic solution for the single particle Green function is derived from dynamical self consistency equations, the corresponding…

强关联电子 · 物理学 2007-05-23 B. Rosenow , R. Oppermann

We introduce a systematic low-energy approach to strongly correlated electron systems in infinite dimensions, and apply it to the problem of the correlation-induced metal-insulator transition in the half-filled Hubbard model. We determine…

凝聚态物理 · 物理学 2007-05-23 Goetz Moeller , Qimiao Si , Gabriel Kotliar , Marcelo Rozenberg

We use Quantum Monte Carlo methods to determine $T=0$ Green functions, $G(\vec{r}, \omega)$, on lattices up to $16 \times 16$ for the 2D Hubbard model at $U/t =4$. For chemical potentials, $\mu$, within the Hubbard gap, $ |\mu | < \mu_c$,…

凝聚态物理 · 物理学 2009-10-28 F. F. Assaad , M. Imada

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

强关联电子 · 物理学 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze

Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…

强关联电子 · 物理学 2024-10-10 Maria Chatzieleftheriou , Silke Biermann , Evgeny A. Stepanov

We examine the metal-insulator transition in a half-filled Hubbard model of electrons with random and all-to-all hopping and exchange, and an on-site non-random repulsion, the Hubbard $U$. We argue that recent numerical results of Cha et…

强关联电子 · 物理学 2020-05-13 Grigory Tarnopolsky , Chenyuan Li , Darshan G. Joshi , Subir Sachdev

A new two-pole approximation, which allows to describe the transition from an insulating state to a metallic one at increase of bandwidth, and also the observable in some compounds transition from a metalic state to an insulating one with…

强关联电子 · 物理学 2007-05-23 Leonid Didukh

The strong coupling diagram technique is used for investigating states near the metal-insulator transition in the half-filled two-dimensional repulsive Hubbard model. The nonlocal third-order term is included in the irreducible part along…

强关联电子 · 物理学 2018-10-30 A. Sherman

The electron spectrum structure in the half-filled Hubbard model is considered in terms of the one-particle Green's functions within many-electron representation. A simple analytical generalization of the single-site Hubbard-III…

强关联电子 · 物理学 2009-11-07 V. Yu. Irkhin , A. V. Zarubin

The single-particle dynamics close to a metal-to-insulator transition induced by strong repulsive interaction between the electrons is investigated. The system is described by a half-filled Hubbard model which is treated by dynamic…

强关联电子 · 物理学 2015-03-13 Michał Karski , Carsten Raas , Götz S. Uhrig

We study antiferromagnetism and single-particle properties in the two-dimensional half-filled Hubbard model at low temperature. Collective spin fluctuations are governed by a non-linear sigma model that we derive from the Hubbard model for…

强关联电子 · 物理学 2007-05-23 K. Borejsza , N. Dupuis

We study the metal-to-insulator transition of the Hubbard model at zero temperatures in infinite dimensions. The coexistence of metallic and insulating solutions for a finite range of the interaction is established. It is shown that the…

凝聚态物理 · 物理学 2015-06-25 Marcelo J. Rozenberg , Goetz Moeller , Gabriel Kotliar

We investigate the metal-insulator transition of the one-dimensional SU(N) Hubbard model for repulsive interaction. Using the bosonization approach a Mott transition in the charge sector at half-filling (k_F=\pi/Na_0) is conjectured for N >…

强关联电子 · 物理学 2009-10-31 Roland Assaraf , Patrick Azaria , Michel Caffarel , Philippe Lecheminant

The $2d$ Hubbard model with nearest-neighbour hopping on the square lattice and an average of one electron per site is known to undergo an extended crossover from metallic to insulating behavior driven by proliferating antiferromagnetic…

强关联电子 · 物理学 2020-03-19 Aaram J. Kim , Fedor Simkovic , Evgeny Kozik

We investigate the doping-driven metal-insulator transition of the (2+1)-dimensional Hubbard model in the path-integral formalism with the tensor renormalization group method. We calculate the electron density $\langle n\rangle$ as a…

强关联电子 · 物理学 2022-03-23 Shinichiro Akiyama , Yoshinobu Kuramashi , Takumi Yamashita

We analyze the unanalytical structure of metal-insulator transition (MIT) in infinite dimensions. By introducing a simple transformation into the dynamical mean-field equation of Hubbard model, a multiple-valued structure in Green's…

强关联电子 · 物理学 2009-11-07 Ning-Hua Tong , Shun-Qing Shen , Fu-Cho Pu

The mechanism that drives a metal-insulator transition in an undoped quasi-one-dimensional Mott insulator is examined in the framework of the Hubbard model with two different hoppings t_{perp 1} and t_{perp 2} between nearest-neighbor…

强关联电子 · 物理学 2011-11-09 M. Tsuchiizu , Y. Suzumura , C. Bourbonnais

In the framework of the many-electron s-d exchange model and Hubbard model, self-consistent equations are derived for the one-particle retarded Green's function in the many-electron Hubbard X-operator representation. We analyze the general…

强关联电子 · 物理学 2015-06-03 A. O. Anokhin , A. V. Zarubin , V. Yu. Irkhin
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