相关论文: Magnetotunneling in a Two-Dimensional Electron-Hol…
We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases formed at nominally identical InAs-AlSb interfaces most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same…
We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature…
We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated by the antiphase oscillations of the conductance and the…
The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…
The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating…
We report on the magnetotransport properties of a prototype Mott insulator/band insulator perovskite heterojunction in magnetic fields up to 31 T and at temperatures between 360 mK and 10 K. Shubnikov-de Haas oscillations in the…
The carriers in InAs-GaSb double quantum wells are hybrid ``electron-holes''. We study the magnetotransport properties of such particles using a two-component Keldysh technique, which results in a semi-analytic expression for the…
We have studied a series of InAs/GaSb coupled quantum wells using magneto-infrared spectroscopy for high magnetic fields up to 33T within temperatures ranging from 4K to 45K in both Faraday and tilted field geometries. This type of coupled…
We present magnetotransport measurements on freely suspended two-dimensional electron gases from AlGaAs/GaAs heterostructures. The technique to realize such devices relies on a specially MBE grown GaAs/AlGaAs-heterostructure including a…
The low-temperature($4.2<T<12.5$ K) magnetotransport ($B<2$ T) of two-dimensional electrons occupying two subbands (with energy $E_1$ and $E_2$) is investigated in GaAs single quantum well with AlAs/GaAs superlattice barriers. Two series of…
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…
The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6T are presented. A specific feature of the structures is a coexistence of the 2D and 3D states…
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall…
We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature…
Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle $\theta$ from the…
We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at…
InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected…
We study the magnetotransport in small hybrid junctions formed by high-mobility GaInAs/InP heterostructures coupled to superconducting (S) and normal metal (N) terminals. Highly transmissive superconducting contacts to a two-dimensional…
In this Letter, four-point magnetotransport of high mobility InGaAs/InP heterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and an analysis is shown whereby the mobility and density of the two-dimensional (2D) accumulation…