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We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…

强关联电子 · 物理学 2015-06-25 S. S. Kancharla , E. Dagotto

We investigate a (semi-)metal to insulator transition (MIT) realized in geometrically frustrated electron systems on the basis of the Hubbard model on a three-dimensional pyrochlore lattice and a two-dimensional checkerboard lattice. Using…

强关联电子 · 物理学 2009-11-10 Satoshi Fujimoto

The persistent proximity of insulating and metallic phases, a puzzling characterestic of manganites, is argued to arise from the self organization of the twofold degenerate e_g orbitals of Mn into localized Jahn-Teller(JT) polaronic levels…

强关联电子 · 物理学 2009-11-10 T. V. Ramakrishnan , H. R. Krishnamurthy , S. R. Hassan , G. V. Pai

We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities…

介观与纳米尺度物理 · 物理学 2014-10-15 J. Shabani , S. Das Sarma , C. J. Palmstrøm

The one-electron spectral-weight function of the half-filled ionic Hubbard model is calculated by means of Quantum Monte Carlo. A metallic regimen occurs between two values of the coupling constant (Hubbard U) U1 < U2 . The system is a band…

强关联电子 · 物理学 2007-05-23 M. C. Refolio , J. M. Lopez Sancho , J. Rubio

We study spin-state transition and phase separation involving this transition based on the milti-orbital Hubbard model. Multiple spin states are realized by changing the energy separation between the two orbitals and the on-site Hund…

强关联电子 · 物理学 2015-05-13 Ryo Suzuki , Tsutomu Watanabe , Sumio Ishihara

We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

We discuss a metal-insulator transition caused by random couplings of magnetic moments in itinerant systems. An analytic solution for the single particle Green function is derived from dynamical self consistency equations, the corresponding…

强关联电子 · 物理学 2007-05-23 B. Rosenow , R. Oppermann

We show that avoided crossings of energy bands may give rise to a variety of phenomena such as transitions from metal to insulator and vice versa, changes in localization lengths, and changes in the fractal dimension of energy spectra. We…

凝聚态物理 · 物理学 2009-10-30 R. Ketzmerick , K. Kruse , T. Geisel

Normal states of the attractive Hubbard model, especially in two dimension, are studied in the light of a transition from a Fermi liquid to an insulating or gapped state. A series of variational Monte Carlo calculations with better…

强关联电子 · 物理学 2009-11-07 Hisatoshi Yokoyama

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…

强关联电子 · 物理学 2018-01-17 O. Nájera , M. Civelli , V. Dobrosavljević , M. J. Rozenberg

We investigate the ground state phase diagram of the half-filled $t-t^{\prime}$ repulsive Hubbard model in the presence of a staggered ionic potential $\Delta$, using the continuum-limit bosonization approach. We find, that with increasing…

强关联电子 · 物理学 2009-11-11 G. I. Japaridze , R. Hayn , P. Lombardo , E. Müller-Hartmann

The use of intense tailored light fields is the perfect tool to achieve ultrafast control of electronic properties in quantum materials. Among them, Mott insulators are materials in which strong electron-electron interactions drive the…

强关联电子 · 物理学 2023-02-07 Eduardo B. Molinero , Rui E. F. Silva

The ground state of a one-dimensional Hubbard model having the next-nearest neighbor hopping (t') as well as the nearest-neighbor one (t) is numerically investigated at half-filling. A quantum Monte Carlo result shows a slowly decaying…

强关联电子 · 物理学 2009-10-30 Kazuhiko Kuroki , Ryotaro Arita , Hideo Aoki

We study antiferromagnetism and single-particle properties in the two-dimensional half-filled Hubbard model at low temperature. Collective spin fluctuations are governed by a non-linear sigma model that we derive from the Hubbard model for…

强关联电子 · 物理学 2007-05-23 K. Borejsza , N. Dupuis

We consider low-temperature behavior of weakly interacting electrons in disordered conductors in the regime when all single-particle eigenstates are localized by the quenched disorder. We prove that in the absence of coupling of the…

介观与纳米尺度物理 · 物理学 2009-11-11 D. M. Basko , I. L. Aleiner , B. L. Altshuler

By means of exact diagonalizations, the Bernevig-Hughes-Zhang model at quarter-filling in the limit of strong Hubbard on-site repulsion is investigated. We find that the non-interacting metallic state will be turned into a Chern insulator…

强关联电子 · 物理学 2025-04-09 Yu-Chin Tzeng , Po-Yao Chang , Min-Fong Yang

Recent advances in many-body physics have made it possible to study correlated electron systems at the two-particle level. In Dynamical Mean-Field theory, it has been shown that the metal-insulator phase diagram is closely related to the…

强关联电子 · 物理学 2022-06-09 Erik G. C. P. van Loon

We present a combined experimental and theoretical study of the electronic structure of the intermetallic compound TiGePt by means of photoelectron spectroscopy, x-ray absorption spectroscopy and fullpotential band structure calculations.…

We present a scaling description of a metal-insulator transition in two-dimensional electron systems that is driven by a vanishing compressibility rather than a vanishing diffusion coefficient. A small set of basic assumptions leads to a…

强关联电子 · 物理学 2016-12-06 D. Belitz , T. R. Kirkpatrick