中文
相关论文

相关论文: Robust Metal-Insulator Transition Despite Surface …

200 篇论文

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…

Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3…

Surface termination is known to play an important role in determining the physical properties of materials. It is crucial to know how surface termination affects the metal-insulator transition (MIT) of V$_2$O$_3$ films for both fundamental…

强关联电子 · 物理学 2021-06-17 Asish K. Kundu , Sukanta Barman , Krishnakumar S. R. Menon

Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries…

The single crystal VO2, exihibiting a first-order metal-insulator transition (MIT) at 67.2 degrees C and an insulator-insulator transition (IIT) at ~49.7 degrees C, is grown. From synchrotron-based x-ray microdiffraction analysis, the IIT…

We study a bandwidth controlled Mott metal-insulator transition (MIT) between a Fermi liquid metal and a quantum spin-liquid insulator at half-filling in three dimensions (3D). Using a slave rotor approach, and incorporating gauge field…

强关联电子 · 物理学 2013-05-29 Daniel Podolsky , Arun Paramekanti , Yong Baek Kim , T. Senthil

Many strongly correlated electronic materials, including high-temperature superconductors, colossal magnetoresistance and metal-insulator-transition (MIT) materials, are inhomogeneous on a microscopic scale as a result of domain structure…

介观与纳米尺度物理 · 物理学 2012-09-05 Jiang Wei , Zenghui Wang , Wei Chen , David H. Cobden

Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase…

强关联电子 · 物理学 2024-06-12 P. Homm , M. Menghini , J. W. Seo , S. Peters , J. -P. Locquet

We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…

强关联电子 · 物理学 2017-06-13 Kaveh Ahadi , Susanne Stemmera

$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition…

强关联电子 · 物理学 2021-01-18 Chang-Yong Kim , Tetiana Slusar , Jinchul Cho , Hyun-Tak Kim

We investigate the differences in the dynamics of the ultrafast photo-induced metal-insulator transition (MIT) of two VO$_2$ thin films deposited on different substrates, TiO$_2$ and Al$_2$O$_3$, and in particular the temperature dependence…

光学 · 物理学 2015-01-19 E. Radue , L. Wang , S. Kittiwatanakul , J. Lu , S. A. Wolf , E. Rossi , R. A. Lukaszew , I. Novikova

Transition metal oxides such as vanadium dioxide (VO$_2$), niobium dioxide (NbO$_2$), and titanium sesquioxide (Ti$_2$O$_3$) are known to undergo a temperature-dependent metal-insulator transition (MIT) in conjunction with a structural…

The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion…

We start by analyzing experimental data of Spinelli [A. Spinelli, M. A. Torija, C. Liu, C. Jan, and C. Leighton, Phys. Rev. B 81, 155110 (2010)] for conductivity of $n$-type bulk crystals of SrTiO$_3$ (STO) with broad electron concentration…

材料科学 · 物理学 2021-06-10 Yi Huang , Y. Ayino , B. I. Shklovskii

$V_2O_3$ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we…

Unveiling the physics that governs the intertwining between the nanoscale self-organization and the dynamics of insulator-to-metal transitions (\textit{IMT}) is key for controlling on demand the ultrafast switching in strongly correlated…

Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated…

Magnetite (Fe3O4) is one of the most actively studied materials with a famous metal-insulator transition (MIT), so-called the Verwey transition at around 123 K. Despite the recent progress in synthesis and characterization of Fe3O4…

强关联电子 · 物理学 2016-02-05 Jisoo Lee , Soon Gu Kwon , Je-Geun Park , Taeghwan Hyeon

We use density functional theory plus dynamical mean-field theory (DFT+DMFT) to study multiple control parameters for tuning the metal-insulator transition (MIT) in CaVO$_3$ thin films. We focus on separating the effects resulting from…

强关联电子 · 物理学 2018-02-14 Sophie Beck , Gabriele Sclauzero , Uday Chopra , Claude Ederer

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…

强关联电子 · 物理学 2008-02-03 K. Ismail , J. O. Chu , Dragana Popovic , A. B. Fowler , S. Washburn
‹ 上一页 1 2 3 10 下一页 ›