中文
相关论文

相关论文: Non-volatile superconducting tunnelling magnetores…

200 篇论文

Superconductor electronics (SCE) is a promising complementary and beyond CMOS technology. However, despite its practical benefits, the realization of SCE logic faces a significant challenge due to the absence of dense and scalable…

Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization…

Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…

As conventional technology scaling approaches physical and power limitations, modern computing systems increasingly face performance bottlenecks arising from memory latency, energy consumption, scalability constraints, and data movement…

硬件体系结构 · 计算机科学 2026-05-22 Siddhartha Raman Sundara Raman

We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs…

材料科学 · 物理学 2015-05-13 Shuu'ichirou Yamamoto , Satoshi Sugahara

We present a probe-type scanning tunneling microscope (STM) with atomic resolution that is designed to be directly inserted and work in a harsh vibrational cryogen-free superconducting magnet system. When a commercial variable temperature…

仪器与探测器 · 物理学 2018-06-01 Wenjie Meng , Jihao Wang , Yubin Hou , Mengqiao Sui , Junting Wang , Gang Wu , Junyun Li , Qingyou Lu

The demand for cryogenic memory components is driven by the need for ultra-fast, low-power, and highly reliable computing systems. Phase slip-based devices promise to fulfill all these requirements, with potential applications in both…

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…

Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…

介观与纳米尺度物理 · 物理学 2013-04-25 Matias Urdampilleta , Svetlana Klyatskaya , Jean-Pierre Cleuziou , Mario Ruben , Wolfgang Wernsdorfer

Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…

超导电性 · 物理学 2021-06-08 M. F. Ritter , A. Fuhrer , D. Z. Haxell , S. Hart , P. Gumann , H. Riel , F. Nichele

A new concept for nonvolatile superconducting memories is proposed. The devices combine ferromagnetic dots for the storage of the data and Josephson junctions for their readout. Good scalability is expected for large scale integration.…

超导电性 · 物理学 2007-05-23 R. Held , J. Xu , A. Schmehl , C. W. Schneider , J. Mannhart , M. R. Beasley

In 1966, Pierre-Gilles de Gennes proposed a non-volatile mechanism for switching superconductivity on and off in a magnetic device. This involved a superconductor (S) sandwiched between ferromagnetic (F) insulators in which the net magnetic…

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…

材料科学 · 物理学 2012-09-06 Luqiao Liu , Chi-Feng Pai , D. C. Ralph , R. A. Buhrman

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…

新兴技术 · 计算机科学 2017-01-04 Jianxin Shen , Dashan Shang , Yisheng Chai , Yue Wang , Junzhuang Cong , Shipeng Shen , Liqin Yan , Wenhong Wang , Young Sun

Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…

Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate…

We propose a superconducting spin-triplet valve, which consists of a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear order characterized by a wave vector that may be aligned in a few…

超导电性 · 物理学 2017-10-24 N. G. Pugach , M. Safonchik , T. Champel , M. E. Zhitomirsky , E. Lähderanta , M. Eschrig , C. Lacroix

With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing fast and non-volatile superconducting memory…

超导电性 · 物理学 2022-08-31 Remko Fermin , Naor Scheinowitz , Jan Aarts , Kaveh Lahabi

The combination of superconducting and magnetic materials to create novel superconducting devices has been motivated by the discovery of Josephson critical current (Ics) oscillations as a function of magnetic layer thickness and the…

The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…