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相关论文: Impacts of Fermi Level Pinning at Hole-Selective C…

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By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the…

材料科学 · 物理学 2015-10-30 Y. G. Fedorenko , J. D. Major , A. Pressman , L. J. Phillips , K. Durose

Schottky contacts (SC) at the ferromagnet/ZnO interface are good candidates for the realization and control of several semiconductor emerging magnetic phenomena such spin injection and spin-controlled photonics. In this work, we demonstrate…

材料科学 · 物理学 2024-01-17 Mohamed Belmoubarik

CdTe is one of the leading materials for low cost, high efficiency thin-film solar cells, because it has a high absorption coefficient and a nearly ideal band gap of 1.48 eV for solar cell according to the Shockley-Queisser limit. However,…

材料科学 · 物理学 2019-08-14 Jingxiu Yang , Su-Huai Wei

We considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in…

材料科学 · 物理学 2016-01-15 Y. G. Fedorenko , J. D. Major , A. Pressman , L. Phillips , K. Durose

Hydrogenated amorphous silicon (a-Si:H) has had a long standing role as a passivating dielectric for c-Si, often utilized in the early development of ICs and more recently for Si solar cells. Although it has been studied for more than 60…

材料科学 · 物理学 2025-01-14 Andrew Diggs , Zitong Zhao , Adam Goga , Zachary Crawford , Gergely T. Zimanyi

The development of advanced electronic devices is contingent upon sustainable material development and pioneering research breakthroughs. Traditional semiconductor-based electronic technology faces constraints in material thickness scaling…

The efficiencies of solar cells based on kesterite Cu$_2$ZnSnS$_4$ (CZTS) and Cu$_2$ZnSnSe$_4$ (CZTSe) are limited by a low open-circuit voltage due to high rates of non-radiative electron-hole recombination. To probe the origin of this…

材料科学 · 物理学 2018-05-11 Bartomeu Monserrat , Ji-Sang Park , Sunghyun Kim , Aron Walsh

We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on simultaneous solution of drift-diffusion and Posisson…

应用物理 · 物理学 2018-12-21 M Rejhon , J Franc , V Dědič , J Pekárek , U N Roy , R Grill , R B James

At semiconductor-metal junctions, the Schottky barrier height is generally fixed by "Fermi-level pinning". We find that when a semiconducting carbon nanotube is end-contacted to a metal (the optinal geometry for nanodevices), the behavior…

凝聚态物理 · 物理学 2009-10-31 Francois Leonard , J. Tersoff

Using angle-resolved photoemission spectroscopy (ARPES) and low-energy electron diffraction (LEED), together with density-functional theory (DFT) calculation, we report the formation of charge density wave (CDW) and its interplay with the…

Materials with reduced dimensionality often exhibit exceptional properties that are different from their bulk counterparts. Here we report the emergence of a commensurate 2 $\times$ 2 charge density wave (CDW) in monolayer and bilayer…

材料科学 · 物理学 2021-02-17 Shu-Ze Wang , Yi-Min Zhang , Jia-Qi Fan , Ming-Qiang Ren , Can-Li Song , Xu-Cun Ma , Qi-Kun Xue

Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present…

材料科学 · 物理学 2015-06-22 Catalin D. Spataru , Francois Leonard

To investigate the role of the interface state on the physical properties of Schottky contacts, Co/n-Ge Schottky diodes that have undergone various cleaning methods (HF etching and in-situ thermal cleaning) were studied by Transmission…

材料科学 · 物理学 2013-06-04 Luc Lajaunie , Marie-Laure David , Jean-François Barbot

Charge-density-wave (CDW) order has long been interpreted as arising from a Fermi-surface instability in the parent metallic phase. While phonon-electron coupling has been suggested to influence the formation of CDW order in…

强关联电子 · 物理学 2015-04-08 Yuwen Hu , Feipeng Zheng , Xiao Ren , Ji Feng , Yuan Li

We show that hole states in recently discovered single-layer InSe are strongly renormalized by the coupling with acoustic phonons. The coupling is enhanced significantly at moderate hole doping ($\sim$10$^{13}$ cm$^{-2}$) due to hexagonal…

材料科学 · 物理学 2019-11-01 A. V. Lugovskoi , M. I. Katsnelson , A. N. Rudenko

We examine the effects of electron-phonon interaction on the dynamics of the charge carriers doped in two-dimensional (2D) Heisenberg antiferromagnet. The $t$-$J$ model Hamiltonian with a Fr\"ohlich term which couples the holes to a…

凝聚态物理 · 物理学 2009-10-28 B. Kyung , S. I. Mukhin , V. N. Kostur , R. A. Ferrell

Lead-free halide double perovskites with the formula of quaternary A$_2^+$B'B'$^{3+}$X$_6^-$ have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their non-toxicity and…

材料科学 · 物理学 2018-08-17 Tianshu Li , Xingang Zhao , Dongwen Yang , Mao-Hua Du , Lijun Zhang

Recent studies have investigated novel strategies to further improve the limited Voc of CdTe solar cells via increased carrier lifetime and doping density of CdTe thin films. Among various metal oxides, aluminum oxide (Al2O3) is a promising…

材料科学 · 物理学 2024-02-21 Etee Kawna Roy , Kaden Powell , Chungho Lee , Gang Xiong , Heayoung Yoon

Model lattices such as the kagome and Lieb lattices have been widely investigated to elucidate the properties of interacting flat-band systems. While a quasicrystal does not have proper bands, the non-interacting density of states of…

强关联电子 · 物理学 2025-08-28 Yuxi Zhang , Richard T. Scalettar , Rafael M. Fernandes

Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, $m$, with that at the Fermi level, $m_F$, and verify that the behaviours of these measured values…

强关联电子 · 物理学 2017-11-08 M. Yu. Melnikov , A. A. Shashkin , V. T. Dolgopolov , S. -H. Huang , C. W. Liu , S. V. Kravchenko
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