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The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional…

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and…

材料科学 · 物理学 2015-05-18 Kin Fai Mak , Changgu Lee , James Hone , Jie Shan , Tony F. Heinz

A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined…

材料科学 · 物理学 2013-10-31 Zongyou Yin , Hai Li , Hong Li , Lin Jiang , Yumeng Shi , Yinghui Sun , Gang Lu , Qing Zhang , Xiaodong Chen , Hua Zhang

The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current…

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…

仪器与探测器 · 物理学 2021-03-02 Zhijuan Xu , Shisheng Lin , Xiaoqiang Li , Shengjiao Zhang , Zhiqian Wu , Wenli Xu , Yanghua Lu , Sen Xu

Inducing electrostatic doping in 2D materials by laser exposure (photodoping effect) is an exciting route to tune optoelectronic phenomena. However, there is a lack of investigation concerning in what respect the action of photodoping in…

Controlling the interconnection of neighboring seeds (nanoflakes) to full coverage of the textured substrate is the main challenge for the large-scale conformal growth of atomic-thick transition metal dichalcogenides by chemical vapor…

Transition metal dichalcogenides (TMDCs) monolayers, as two-dimensional (2D) direct bandgap semiconductors, hold promise for advanced optoelectronic and photocatalytic devices. Interaction with three-dimensional (3D) metals, like Au,…

介观与纳米尺度物理 · 物理学 2024-04-16 Tao Yang , Stephan Sleziona , Erik Pollmann , Eckart Hasselbrink , Peter Kratzer , Marika Schleberger , R. Kramer Campen , Yujin Tong

Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics and energy harvesting. Large-area growth methods are needed to open the way to the…

The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to…

介观与纳米尺度物理 · 物理学 2013-07-19 Chung-Chiang Wu , Deep Jariwala , Vinod K. Sangwan , Tobin J. Marks , Mark C. Hersam , Lincoln J. Lauhon

Monolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon…

2D MoS2 attracts increasing attention for its application in flexible electronics and photonic devices. For 2D material optoelectronic devices, light absorption of the molecularly thin 2D absorber would be one of the key limiting factors in…

介观与纳米尺度物理 · 物理学 2023-01-04 Xiaoxue Gao , Sidan Fu , Tao Fang , Xiaobai Yu , Haozhe Wang , Qingqing Ji , Jing Kong , Xiaoxin Wang , Jifeng Liu

MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding…

介观与纳米尺度物理 · 物理学 2017-08-02 Eric Parzinger , Martin Hetzl , Ursula Wurstbauer , Alexander W. Holleitner

Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor…

介观与纳米尺度物理 · 物理学 2014-06-25 Udai Bhanu , Muhammad R. Islam , Laurene Tetard , Saiful I. Khondaker

Owing to its atomically thin thickness, layer-dependent tunable band gap, flexibility, and CMOS compatibility, MoS$_2$ is a promising candidate for photodetection. However, mono-layer MoS2-based photodetectors typically show poor…

The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient…

材料科学 · 物理学 2011-09-13 T. Korn , S. Heydrich , M. Hirmer , J. Schmutzler , C. Schüller

Two dimensional semiconductors have attracted considerable attention owing to their exceptional electronic and optical characteristics. However, their practical application has been hindered by the limited light absorption resulting from…

MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex photoresponse characteristics. We study the electrical…

介观与纳米尺度物理 · 物理学 2016-07-05 Sangeeth Kallatt , Govindarao Umesh , Navakanta Bhat , Kausik Majumdar

The light absorption and transmission of monolayer MoS$_{2}$ in a one-dimensional defective photonic crystal (d-1DPC) is theoretically investigated. The study shows that the strong interference effect decreases photon density in particular…

光学 · 物理学 2015-12-09 Fang-Fang Yang , Ying-Long Huang , Wen-bo Xiao , Jiang-Tao Liu , Nian-Hua Liu
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