相关论文: Reduced Variability in Threshold Switches Using He…
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide…
We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was…
The advent of twist-engineering in two-dimensional (2D) crystals enables the design of van der Waals (vdW) heterostructures exhibiting emergent properties. In the case of magnets, this approach can afford artificial antiferromagnets with…
Non-van der Waals two-dimensional (2D) materials derived from strongly bonded non-layered crystals have recently emerged as a novel and rising platform for nanoscale research. While uncovering and tuning their (opto-)electronic, catalytic,…
Understanding charge transfer at oxide interfaces is crucial for designing materials with emergent electronic and magnetic properties, especially in systems where strong electron correlations and spin-orbit coupling coexist.…
We demonstrate a new method of designing 2D functional magnetic topological heterostructure (HS) by exploiting the vdw heterostructure (vdw-HS) through combining 2D magnet CrI$_3$ and 2D materials (Ge/Sb) to realize new 2D topological…
Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological…
A superstructure can elicit versatile new properties of materials by breaking their original geometrical symmetries. It is an important topic in the layered graphene-like two-dimensional transition-metal dichalcogenides (TMDs), but its…
Building on discoveries in graphene and two-dimensional (2D) transition metal dichalcogenides, van der Waals (VdW) layered heterostructures - stacks of such 2D materials - are being extensively explored with resulting new discoveries of…
This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical…
Wetting behaviour of surfaces is believed to be affected by van der Waals (vdW) forces, however, there is no clear demonstration of this. With the isolation of two-dimensional vdW layered materials it is possible to test this hypothesis. In…
Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced…
The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for novel spintronic devices with exceptional performances. However, in order to utilize 2D vdW magnets for building spintronic…
Twisted vdW quantum materials have emerged as a rapidly developing field of 2D semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the…
Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of…
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…
Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of…
Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au…
Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the…
Research on two-dimensional (2D) topological insulators (TIs) is obstructed due to the lack of feasible approaches to growing 2D TIs in experiments. Through systematic first-principles calculations and tight-binding simulations, we propose…