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相关论文: Altermagnetism induced surface Chern insulator

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We theoretically demonstrate that Chern number tunable quantum anomalous Hall effect (QAHE) and second-order topological insulators can be induced in the two-dimensional $\mathbb{Z}_2$ topological insulator (TI), i.e., Kane-Mele model, by…

介观与纳米尺度物理 · 物理学 2025-07-08 Zhengtian Li , Zeyu Li , Zhenhua Qiao

In this work, we propose a scheme to realize the layer Hall effect in the ferromagnetic topological insulator Bi$_2$Se$_3$ via proximity to $d$-wave altermagnets. We show that an altermagnet and an in-plane magnetic field applied near one…

介观与纳米尺度物理 · 物理学 2026-04-21 Fang Qin , Rui Chen

Recent work has extended topological band theory to open, non-Hermitian Hamiltonians, yet little is understood about how non-Hermiticity alters the topological quantization of associated observables. We address this problem by studying the…

介观与纳米尺度物理 · 物理学 2018-10-31 Timothy M. Philip , Mark R. Hirsbrunner , Matthew J. Gilbert

As one of paradigmatic phenomena in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. By using model Hamiltonian analysis and first-principle…

介观与纳米尺度物理 · 物理学 2019-09-04 Hongyi Sun , Bowen Xia , Zhongjia Chen , Yingjie Zhang , Pengfei Liu , Qiushi Yao , Hong Tang , Yujun Zhao , Hu Xu , Qihang Liu

Quantum anomalous Hall effect (QAHE) is a fundamental transport phenomenon in the field of condensed-matter physics. Without external magnetic field, spontaneous magnetization combined with spin-orbit coupling give rise to a quantized Hall…

介观与纳米尺度物理 · 物理学 2013-05-08 Z. F. Wang , Zheng Liu , Feng Liu

The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semi-classical framework, all three contributions to the AHE, the intrinsic Berry phase curvature effect, the side-jump…

介观与纳米尺度物理 · 物理学 2019-07-24 Amir Sabzalipour , Bart Partoens

We demonstrate that introducing altermagnetism on the surface of a weak topological insulator (TI) results in the emergence of a single massless Dirac fermion, exhibiting a parity anomaly. To explore the transport properties induced by this…

介观与纳米尺度物理 · 物理学 2025-09-05 Yu-Hao Wan , Qing-Feng Sun

The quantum anomalous Hall effect (QAHE) is an exotic quantum phenomenon originating from dissipation-less chiral channels at the sample edge. While the QAHE has been observed in magnetically doped topological insulators (TIs), exploiting…

To magnetize surfaces of topological insulators without damaging their topological feature is a crucial step for the realization of the quantum anomalous Hall effect (QAHE), and still remains as a challenging task. Through density…

介观与纳米尺度物理 · 物理学 2019-06-04 Yusheng Hou , Ruqian Wu

The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TI) exhibits many fascinating physical properties for potential applications in nano-electronics and spintronics. However,…

The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable…

介观与纳米尺度物理 · 物理学 2021-05-25 Yuchen Ji , Zheng Liu , Peng Zhang , Lun Li , Shifei Qi , Peng Chen , Yong Zhang , Qi Yao , Zhongkai Liu , Kang L. Wang , Zhenhua Qiao , Xufeng Kou

We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet…

Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low…

材料科学 · 物理学 2020-01-22 Shifei Qi , Ruiling Gao , Maozhi Chang , Yulei Han , Zhenhua Qiao

The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition…

材料科学 · 物理学 2015-10-28 Zilong Jiang , Cui-Zu Chang , Chi Tang , Peng Wei , Jagadeesh S. Moodera , Jing Shi

The quantum anomalous Hall effect (QAHE), characterized by dissipationless quantized edge transport, relies crucially on a non-trivial topology of the electronic bulk bandstructure and a robust ferromagnetic order that breaks time-reversal…

材料科学 · 物理学 2019-05-01 M. F. Islam , Anna Pertsova , C. M. Canali

The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic…

计算物理 · 物理学 2022-12-29 Feng Xue , Yusheng Hou , Zhe Wang , Zhiming Xu , Ke He , Ruqian Wu , Yong Xu , Wenhui Duan

We investigate a new class of topological antiferromagnetic (AF) Chern insulators driven by electronic interactions in two-dimensional systems without inversion symmetry. Despite the absence of a net magnetization, AF Chern insulators…

强关联电子 · 物理学 2018-04-17 Kun Jiang , Sen Zhou , Xi Dai , Ziqiang Wang

Recently, the quantum anomalous Hall effect (QAHE) has been theoretically proposed in compensated antiferromagnetic systems by using the magnetic topological insulator model [see arXiv:2404.13305 (2024)]. However, the related and systematic…

材料科学 · 物理学 2025-07-08 Zeyu Li , Yulei Han , Zhenhua Qiao

We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the…

The quantum anomalous Hall effect (QAHE) hosts the dissipationless chiral edge states associated with the nonzero Chern number, providing potentially significant applications in future spintronics. The QAHE usually occurs in a…

强关联电子 · 物理学 2018-08-08 Y. J. Jin , R. Wang , B. W. Xia , B. B. Zheng , H. Xu
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