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相关论文: Anharmonic Effects in Ge2Sb2Te5 and Consequences o…

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Chalcogenide phase-change materials (PCMs) are important for nonvolatile memory and reconfigurable photonic technologies. The GeTe-Sb2Te3 mixture system, commonly referred to as GST, is the most well-known PCM family, but new PCMs are…

材料科学 · 物理学 2026-05-01 Felix Adams , Ichiro Takeuchi , Carlos Ríos Ocampo , Yifei Mo

Chalcogenide alloys are materials of interest for optical recording and non-volatile memories. We perform ab-initio molecular dynamics simulations aiming at shading light onto the structure of amorphous Ge2Sb2Te5 (GST), the prototypical…

材料科学 · 物理学 2009-11-13 S. Caravati , M. Bernasconi , T. D. Kuehne , M. Krack , M. Parrinello

A class of chalcogenide alloy materials that shows significant changes in optical properties upon an amorphous-to-crystalline phase transition has lead to development of large data capacities in modern optical data storage. Among…

材料科学 · 物理学 2011-01-13 Kotaro Makino , Junji Tominaga , Muneaki Hase

Multi-component chalcogenides, such as quasi-binary GeTe-Sb$_{2}$Te$_{3}$ alloys, are widely used in optical data storage media in the form of rewritable optical discs. Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) in particular has proven to be one of…

材料科学 · 物理学 2015-09-29 Muneaki Hase , Paul Fons , Kirill Mitrofanov , Alexander V. Kolobov , Junji Tominaga

We analyze, design and assess the performance of a reflective reconfigurable metasurface (MS) architecture for optical wireless communications. The device is based on the Ge-Sb-Te (GST225) phase-change material (PCM) alloy, thermally…

Carbon nanotube (CNT) heaters with sub-5 nm diameter induce highly localized phase change in Ge2Sb2Te5 (GST) chalcogenide. A significant reduction in resistance of test structures is measured as the GST near the CNT heater crystallizes.…

材料科学 · 物理学 2010-03-23 Feng Xiong , Albert Liao , Eric Pop

We propose an all-photonic, non-volatile memory and processing element based on phase-change thin-films deposited onto nanophotonic waveguides. Using photonic microring resonators partially covered with Ge2Sb2Te5 (GST) multi-level memory…

光学 · 物理学 2015-06-11 Wolfram Pernice , Harish Bhaskaran

In the search for phase change materials (PCM) that may rival traditional random access memory, a complete understanding of the amorphous to crystalline phase transition is required. For the well-known Ge2Sb2Te5 (GST) and GeTe (GT)…

材料科学 · 物理学 2015-06-19 James L. Bosse , Ilya Grishin , Bryan D. Huey , Oleg V. Kolosov

The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and…

材料科学 · 物理学 2015-06-22 J. L. Bosse , M. Timofeeva , P. D. Tovee , B. J. Robinson , B. D. Huey , O. V. Kolosov

Chalcogenide phase-change materials (PCMs) show a significant contrast in optical reflectivity and electrical resistivity upon crystallization from the amorphous phase and are leading candidates for non-volatile photonic and electronic…

材料科学 · 物理学 2021-05-20 Shehzad Ahmed , Xudong Wang , Yuxing Zhou , Liang Sun , Riccardo Mazzarello , Wei Zhang

One of the most widely used active materials for phase-change memories (PCM), the ternary stoichiometric compound Ge$_2$Sb$_2$Te$_5$ (GST), has a low crystallization temperature of around 150$^\circ$C. One solution to achieve higher…

材料科学 · 物理学 2024-09-11 Robin Miquel , Thomas Cabout , Olga Cueto , Benoît Sklénard , Mathis Plapp

Chalcogenide phase-change materials (PCMs) are one of the most mature candidates for next-generation memory technology. Recently, CrGeTe3 (CrGT) emerged as a promising PCM due to its enhanced amorphous stability and fast crystallization for…

材料科学 · 物理学 2024-11-12 Yihui Jiang , Suyang Sun , Hanyi Zhang , Xiaozhe Wang , Yibo Lei , Riccardo Mazzarello , Wei Zhang

This work investigates the problematic diffusion of metal atoms into phase change chalcogenides, which can destroy resonances in photonic devices. Interfaces between Ge2Sb2Te5 and metal layers were studied using X-ray reflectivity (XRR) and…

光学 · 物理学 2019-01-09 Li Lu , Weiling Dong , Jitendra K. Behera , Li Tian Chew , Robert E. Simpson

While phase-change materials (PCMs) composed of chalcogenide have different crystallization mechanisms (CM), such as nucleation-dominated Ge2Sb2Te5 (GST) and growth-dominated GeTe (GT), revealing the essential reason of CM as well as the…

Layered transition-metal trichalcogenides have become one of the research frontiers as two-dimensional magnets and candidate materials used for phase-change memory devices. Herein we report the high-pressure synchrotron X-ray diffraction…

We harness non-volatile, amorphous-crystalline transitions in the chalcogenide phase-change medium germanium antimony telluride (GST) to realize optically-switchable, all-dielectric metamaterials. Nanostructured, subwavelength-thickness…

介观与纳米尺度物理 · 物理学 2016-08-04 Artemios Karvounis , Behrad Gholipour , Kevin F. MacDonald , Nikolay I. Zheludev

Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime…

Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb$_2$Te alloys are now gaining increasing attention for on-chip photonic…

Phase change materials (PCMs) are well-known for their reversible and rapid switching between crystalline and amorphous phases through thermal excitations mediated by strong electrical or laser pulses. This crystal-to-amorphous transition…

We present a stochastic simulator for polycrystalline phase-change materials capable of spatio-temporal modelling of complex anneals. This is based on consideration of bulk and surface energies to generate rates of growth and decay of…

计算物理 · 物理学 2007-09-21 Peter Ashwin , Patnaik BSV , C. David Wright
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