相关论文: Ballistic electron transport described by a genera…
A fourth-order Schr\"{o}dinger equation for the description of charge transport in semiconductors in the ballistic regime is proposed with the inclusion of non-parabolic effects in the dispersion relation in order to go beyond the simple…
Schr\"odinger equation with given, {\it a priori} known current is formulated. A non-zero current density is maintained in the quantum system via a subsidiary condition imposed by vector, local Lagrange multiplier. Constrained minimization…
We show that by integrating out the electric field and incorporating proper boundary conditions, a semiclassical Boltzmann equation can describe electron transport properties, continuously from the diffusive to ballistic regimes. General…
For electron transport in parallel-plane semiconducting structures, a model is developed that unifies ballistic and diffusive transport and thus generalizes the Drude model. The unified model is valid for arbitrary magnitude of the mean…
The space- and temperature-dependent electron distribution $n(\mathbf r,T)$ is essential for the theoretical description of the opto-electronic properties of disordered semiconductors. We present two powerful techniques to access $n(\mathbf…
Starting with the many-body Schr\"odinger equation we derive new rate equations for resonant transport in quantum dots linked by ballistic channels with high density of states. The charging and the Pauli exclusion principle effects were…
In this paper, we show that one-dimensional discrete multi-frequency quasiperiodic Schr\"odinger operators with smooth potentials demonstrate ballistic motion on the set of energies on which the corresponding Schr\"odinger cocycles are…
The central limit theorem has been found to apply to random vectors in complex Hilbert space. This amounts to sufficient reason to study the complex valued Gaussian, looking for relevance to quantum mechanics. Here we show that the…
In this paper, we study one-dimensional linear Schr\"odinger equations with multiple moving potentials, known as transfer charge models. Focusing on the non-self-adjoint setting that arises in the study of solitons, we systematically…
Transport through semiconductor nanostructures is a quantum-coherent process. This paper focuses on systems in which the electron's dynamics is ballistic and the transport is dominated by the scattering from structure boundaries. Opposite…
Charge transport in disordered two-dimensional (2D) systems showcases a myriad of unique phenomenologies that highlight different aspects of the underlying quantum dynamics. Electrons in such systems undergo a crossover from ballistic…
An analytical formula is derived for particle and energy densities of fermions and bosons, and their ballistic momentum and energy currents for anisotropic energy dispersions in generalized dimensions. The formulation considerably…
We propose a unified diffusion-mobility relation which quantifies both quantum and classical levels of understanding on electron dynamics in ordered and disordered materials. This attempt overcomes the inability of classical Einstein…
We explore the charge transport mechanism in organic semiconductors based on a model that accounts for the thermal intermolecular disorder at work in pure crystalline compounds, as well as extrinsic sources of disorder that are present in…
We prove the existence of ballistic transport for the Schr\"odinger operator with limit-periodic or quasi-periodic potential in dimension two. This is done under certain regularity assumptions on the potential which have been used in prior…
For the first time, a nonlinear Schr\"odinger equation of the general form is considered, depending on time and two spatial variables, the potential and dispersion of which are specified by two arbitrary functions. This equation naturally…
Carrier mobility in bulk semiconductors is typically governed by electron-phonon (e-ph) scattering. In nanostructures, spatial confinement can lead to significant surface scattering, lowering mobility and breaking the spatial homogeneity…
The Landauer expression for computing current-voltage characteristics in nanoscale devices is efficient and widely applicable but not suited to transient phenomena and time dependent currents because it assumes that the charge carrier…
We modify the Schr\"{o}dinger equation in a way that preserves its main properties but makes use of higher order derivative terms. Although the modification represents an analogy to the Doebner-Goldin modification, it can differ from it…
In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…