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Edge states are one important ingredient to understand transport properties of graphene nanoribbons. We study experimentally the existence and the internal structure of edge states under uniaxial strain of the three main edges: zigzag,…

介观与纳米尺度物理 · 物理学 2014-12-10 Matthieu Bellec , Ulrich Kuhl , Gilles Montambaux , Fabrice Mortessagne

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto

We propose a straightforward and effective approach to design, by strain-engineering, photonic topological insulators supporting high quality factors edge states. Chiral strain-engineering creates opposite synthetic gauge fields in two…

The edge states in the hybrid system of single-layer and double-layer graphene are studied in the tight-binding model theoretically. The edge states in one side of the interface between single-layer and double-layer graphene are shown to…

介观与纳米尺度物理 · 物理学 2012-04-03 Yasumasa Hasegawa , Mahito Kohmoto

Based on the tight-binding model calculations and photonic experimental visualization on graphene, we report the domain-wall-induced gapped topological kink states and topological corner states. In graphene, domain walls with gapless…

介观与纳米尺度物理 · 物理学 2020-05-26 Yuting Yang , Ziyuan Jia , Yijia Wu , Zhi-Hong Hang , Hua Jiang , X. C. Xie

Controlling the properties of materials by driving them out of equilibrium is an exciting prospect that has only recently begun to be explored. In this paper we give a striking theoretical example of such materials design: a tunable gap in…

介观与纳米尺度物理 · 物理学 2013-04-29 Thomas Iadecola , David Campbell , Claudio Chamon , Chang-Yu Hou , Roman Jackiw , So-Young Pi , Silvia Viola Kusminskiy

Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of…

材料科学 · 物理学 2022-10-19 Nina C. Georgoulea , Stephen R. Power , Nuala M. Caffrey

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…

介观与纳米尺度物理 · 物理学 2011-04-07 F. Guinea , M. I. Katsnelson , A. K. Geim

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

介观与纳米尺度物理 · 物理学 2016-06-07 Viet Hung Nguyen , Trinh Xuan Hoang , Philippe Dollfus , Jean-Christophe Charlier

The discovery of correlated phases in twisted moir\'e superlattices accelerated the search for low-dimensional materials with exotic properties. A promising approach uses engineered substrates to strain the material. However, designing…

介观与纳米尺度物理 · 物理学 2023-08-25 Md Tareq Mahmud , Dawei Zhai , Nancy Sandler

By considering the continuous model for graphene, we analytically study a special gauge field for the edge state. The gauge field explains the properties of the edge state such as the existence only on the zigzag edge, the partial…

介观与纳米尺度物理 · 物理学 2007-05-23 Ken-ichi Sasaki , Shuichi Murakami , Riichiro Saito

Graphene properties can be manipulated by a periodic potential. Based on the tight-binding model, we study graphene under a one-dimensional (1D) modulated magnetic field which contains both a uniform and a staggered component. New chiral…

强关联电子 · 物理学 2011-01-18 Lei Xu , Jin An , Chang-De Gong

We show that when the pseudomagnetic fields created by long wavelength deformations are appropriately coupled with a scalar electric potential, a significant energy gap can emerge due to the formation of a Haldane state. Ramifications of…

介观与纳米尺度物理 · 物理学 2011-05-31 T. Low , F. Guinea , M. I. Katsnelson

The effect of strain in graphene is usually modeled by a pseudo-magnetic vector potential which is, however, derived in the limit of small strain. In realistic cases deviations are expected in view of graphene's very high strain tolerance,…

介观与纳米尺度物理 · 物理学 2014-01-27 D. Moldovan , M. Ramezani Masir , F. M. Peeters

There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches…

In the presence of a circularly polarized mid-infrared radiation graphene develops dynamical band gaps in its quasi-energy band structure and becomes a Floquet insulator. Here we analyze how topologically protected edge states arise inside…

介观与纳米尺度物理 · 物理学 2014-09-23 Gonzalo Usaj , P. M. Perez-Piskunow , L. E. F. Foa Torres , C. A. Balseiro

The strain induced pseudo-magnetic field in supported graphene deposited on top of a nanostructured substrate is investigated by using atomistic simulations. Step, elongated trench, one dimensional barrier, spherical bubbles, Gaussian bump…

介观与纳米尺度物理 · 物理学 2015-06-04 M. Neek-Amal , F. M. Peeters

We explore the electronic structure and topological phase diagram of heterostructures formed of graphene and ternary bismuth tellurohalide layers. We show that mechanical strain inherently present in fabricated samples could induce a…

介观与纳米尺度物理 · 物理学 2020-06-24 Zoltán Tajkov , Dávid Visontai , László Oroszlány , János Koltai

We investigate the organized formation of strain, ripples and suspended features in macroscopic CVD-prepared graphene sheets transferred onto a corrugated substrate made of an ordered arrays of silica pillars of variable geometries.…

We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is…

介观与纳米尺度物理 · 物理学 2025-11-27 Jesús Arturo Sánchez-Sánchez , Thomas Stegmann
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