相关论文: Enhanced anomalous Hall conductivity via Ga doping…
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn$_3$Sn,…
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…
We investigate the evolution of Anomalous Hall Conductivity (AHC) in a coplanar and collinear antiferromagnetic system with varying spin canting angles. A tight-binding model based on three t2g-orbitals in a body-centered tetragonal lattice…
An anomalous Hall effect (AHE) in antiferromagnetic (AF) systems with no net magnetization is of considerable interest for both fundamental physics and spintronic applications. Of particular interest is the two-dimensional van der Waals…
By combining symmetry analysis and direct density functional calculations including the spin-orbit coupling, we demonstrate that anomalous Hall effect can be observed in not only germanides with general formula RMn$_2$Ge$_2$, where $R$ is a…
We present high field magnetotransport studies of Ge1-x-y(SnxMny)Te bulk multiferroics with diamagnetic Sn and paramagnetic Mn concentration x = 0.38 to 0.79 and y = 0.02 to 0.086, respectively. The zero field resistivity, {\rho}(T) takes…
The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) are the transverse transport phenomena in magnetic materials, which reflect the Berry curvature arising from the electronic structure near the Fermi level. Lattice strain…
The anomalous Hall effect (AHE) is an efficient tool for detecting the N\'eel vector in collinear compensated magnets with spin-split bands, known as altermagnets (AMs). Here, we establish design principles for obtaining non-zero anomalous…
Topological magnetic materials are expected to show multiple transport responses because of their unusual bulk electronic topology in momentum space and topological spin texture in real space. However, such multiple topological…
Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…
Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity and Hall resistivity and thermal transport ones…
Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we…
Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable…
The cubic Cu$_3$Au-type $X$Pt$_3$ family ($X$ = V, Cr, and Mn) is a topological semimetal characterized by anti-crossing gapped nodal lines near the Fermi level, which give rise to significant Berry curvatures and thus to the anomalous Hall…
Hexagonal MnTe has emerged as a prototypical g-wave altermagnet, hosting time-reversal symmetry breaking in momentum space despite a vanishing net magnetization. While this symmetry breaking theoretically allows for an intrinsic anomalous…
The spin anomalous Hall effect (SAHE) in ferromagnetic metals, which can generate spin-orbit torque to rotate the magnetization of another ferromagnetic layer through a non-magnetic spacer in magnetic junctions, has attracted much…
The anomalous Hall effect (AHE) in perpendicularly magnetized L10-Mn1.5Ga single-crystalline films is investigated as a function of degree of long-range chemical ordering and temperature. Our results provide firm evidence that phonons has…
The influence of varying the number of bilayers (N) on the anomalous Hall effect (AHE) in sputtered Si/Fe multilayers has been investigated. Both the AHE and magnetisation data reveal the in-plane magnetic anisotropy in the samples. Large…
Anomalous Hall effect (AHE) plays important role in the rapidly developing field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic…
The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the…