相关论文: Enhanced anomalous Hall conductivity via Ga doping…

In this paper, the anomalous Hall effect of topologically-nontrivial MXenes, $M_2M'$C$_2$O$_2$, and the electronic structure in the presence of magnetic proximity effect is theoretically investigated. The theoretical analysis is performed…

Anomalous Hall effect studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient are obtained…

Antiferromagnetic Weyl semimetal Mn$_3$Sn has shown to generate strong intrinsic anomalous Hall effect (AHE) at room temperature, due to large momentum-space Berry curvature from the time-reversal symmetry breaking electronic bands of the…

Antiferromagnetic (AFM) spintronics exploits the N\'eel vector as a state variable for novel spintronic devices. Recent studies have shown that the field-like and antidamping spin-orbit torques (SOT) can be used to switch the N\'eel vector…

The interactions between conduction electrons and magnetism can significantly enhance the Hall signal, a phenomenon known as the anomalous Hall effect (AHE). While the AHE is generally not expected in antiferromagnets, a large AHE is…

Tunable electronic properties in magnetic materials lead to novel physical phenomena that have the potential to be exploited in the design of new spintronic devices. Here, we report the effect of uniaxial stress on the anomalous Hall effect…

Co$_3$Sn$_2$S$_2$ is believed to be a magnetic Weyl semimetal. It displays large anomalous Hall, Nernst and thermal Hall effects with a remarkably large anomalous Hall angle. Here, we present a comprehensive study of how substituting Co by…

We theoretically propose a mechanism for the anomalous Hall effect (AHE) in an antiferrromagnetic (AFM) state of $\kappa$-type organic conductors. We incorporate the spin-orbit coupling in the effective Hubbard model on the $\kappa$-type…

The anomalous Hall effect (AHE) of ferromagnetic thin films of Sr$_{1-x}$Ca$_{x}$RuO$_3$ (0 $\leq x \leq$ 0.4) is studied as a function of $x$ and temperature $T$. As $x$ increases, both the transition temperature $T_c$ and the…

The anomalous transport properties of Heusler compounds become a hotspot of research in recent years due to their unique band structure and possible application in spintronics. In this paper, we report the anomalous Hall effect in…

We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x = 0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in…

In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…

The discovery of a significantly large anomalous Hall effect in the chiral antiferromagnetic system - Mn$_3$Ge - indicates that the Weyl points are widely separated in phase space and positioned near the Fermi surface. In order to examine…

Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and…

Mn$_{3}$X (X= Sn, Ge) are noncollinear antiferromagnets hosting a large anomalous Hall effect (AHE). Weyl nodes in the electronic dispersions are believed to cause this AHE, but their locus in the momentum space is yet to be pinned down. We…

The large anomalous Hall effect (AHE) in antiferromagnetic (AF) materials arises from symmetry breaking equivalent to a ferromagnetic (FM) state. Consequently, this suggests that the observed AHE is induced by the intrinsic mechanism of the…

Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes…

We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of…

The recent studies on the anomalous Hall effect (AHE) have revealed an intrinsic relationship between the topological band structure and the experimentally observed transverse conductivity. Consequently, this has led to a heightened focus…

We investigate ultrafast dynamics of the anomalous Hall effect (AHE) in the topological antiferromagnet Mn3Sn with sub-100 fs time resolution. Optical pulse excitations largely elevate the electron temperature up to 700 K, and terahertz…