相关论文: Antiferromagnetic Hall-Memristors
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Spin-torque ferromagnetic resonance (ST-FMR) particularly using magnetic insulators and heavy metals possessing a giant spin Hall effect (SHE) has gotten a lot of attention for the development of spintronic devices. To devise complex…
We show that magnetic insulators with a collinear and compensated order can exhibit a thermal Hall effect even at zero magnetic field if they have altermagnetic symmetries. We predict a finite thermal Hall conductivity vector…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
Magnon spin Hall systems could hardly show experimentally observable particle and thermal transport phenomena intrinsically due to the spin cancellation. Here we demonstrated that the magnon spin Hall systems can exhibit magnon Nernst…
In this paper, we report the observation of spin-orbit magnetoresistance (SOMR) in ferromagnetic metal/heavy metal/MgO system. We measure the magnetoresistance as the function of the thickness of heavy metal (HM) for CoFeB/HM/MgO and…
In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and…
Reading antiferromagnetic order remains a central obstacle for antiferromagnetic memory and logic because zero net magnetisation precludes conventional magnetic readout. Domain imaging typically relies on x-ray magnetic linear dichroism…
As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts,…
Altermagnets, which reconcile zero net magnetization with pronounced spin splitting, offer fresh opportunities for spin-based functionalities in next-generation electronic and spintronic devices. In this paper, we explore the unconventional…
Spin-split antiferromagnets have significance for antiferromagnetic (AFM) spintronics due to their momentum dependent spin polarization which can be exploited for the control and detection of the AFM order parameter. Here, we explore the…
Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting…
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…
Metallic antiferromagnets with noncollinear orientation of magnetic moments provide a playground for investigating spin-dependent transport properties by analysis of the anomalous Hall effect. The intermetallic compound Mn5Si3 is an…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or…
One of the major strategies to control magnetism in spintronics is to utilize the coupling between electron spin and its orbital motion. The Rashba and Dresselhaus spin-orbit couplings induce magnetic textures of band electrons called spin…
The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We…