相关论文: Antiferromagnetic Hall-Memristors

Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these…

The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device…

Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The…

Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…

Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…

Antiferromagnetism couples electron spin to its orbital motion, thus allowing excitation of electron-spin transitions by an ac electric rather than magnetic field - with absorption, exceeding that of common electron spin resonance at least…

Ferromagnets with high spin polarization are known to be valuable for spintronics--a research field that exploits the spin degree of freedom in information technologies. Recently, antiferromagnets have emerged as promising alternative…

We report a novel singularity in the hysteresis of spin glasses, the reversal-field memory effect, which creates a non-analyticity in the magnetization curves at a particular point related to the history of the sample. The origin of the…

We show that ideal memristors - devices whose resistance is proportional to the charge that flows through them - can be realized using spin torque-driven viscous magnetization dynamics. The latter can be accomplished in the spin liquid…

Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network,…

We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse…

First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting…

The optical generation of nonequilibrium spin magnetization plays a crucial role in advancing spintronics, providing ultrafast control of magnetization dynamics without the need for magnetic fields. Here, we demonstrate the feasibility of…

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to…

Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W)…

Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…

Non-relativistic spin splitting in antiferromagnets has recently attracted considerable attention. Here we present a universal framework for controlling such spin splitting by identifying and manipulating the key atomic distortions that…

We propose theoretically a generalized memristive system based on controlled spin polarizations in the giant magnetoresistive material using a feedback loop with the classical Hall Effect. The dynamics can exhibit a memristive pinched…

We study the temperature dependence of spin Hall magnetoresistance (SMR) in antiferromagnetic insulator (AFI)/metal bilayer systems. We calculate the amplitude of the SMR signal by using a quantum Monte Carlo simulation and examine how the…

Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…