相关论文: Self-Powered, Ultra-thin, Flexible, and Scalable U…
A high-performance fast response deep ultraviolet (UV) photodetectors with interdigitated Ti/Au planar electrodes using a lithography technology has fabricated on homoepitaxial diamond. The device shows a high ultraviolet photocurrent at…
Selective spectral detection of ultraviolet (UV) radiation is highly important across numerous fields from health and safety to industrial and environmental monitoring applications. Herein, we report a non-toxic, visible-blind, inorganic…
A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with…
Van der Waals (vdWs) heterostructures assembled by stacking 2D crystal layers have proven to be a new material platform for high-performance optoelectronic applications such as thin film transistors, photodetectors, and emitters. Here, we…
Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based…
Ultrawide-bandgap semiconductors are attractive for solar-blind ultraviolet (UV) detection owing to their intrinsically low noise and high spectral selectivity, yet their deployment in large-area, high-density electronic imaging systems…
Owing to its atomically thin thickness, layer-dependent tunable band gap, flexibility, and CMOS compatibility, MoS$_2$ is a promising candidate for photodetection. However, mono-layer MoS2-based photodetectors typically show poor…
The growing demand for real-time ultraviolet (UV) monitoring calls for a simple, rapid, and low-cost strategy to prepare UV photodetectors. We prepare a wearable real-time UV photodetector based on hydrogenated titanium dioxide film…
We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T > 1850 {\deg}C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
Two-dimensional molybdenum disulfide (MoS$_2$) featuring atomically thin thickness and unique electronic structure with favorable bandgap has been widely recognized as an attractive new material for the development of the next generation of…
We demonstrate a zero-bias ultraviolet (UV) detector using zinc oxide (ZnO) thin films as the active semiconductor layer, specifically for application in cryogenic conditions. The zero-bias device utilizes the piezoelectric potential…
Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated…
Magnetic imaging based on ensembles of diamond nitrogen-vacancy quantum sensors has emerged as a useful technique for the spatial characterisation of magnetic materials and current distributions. However, demonstrations have so far been…
The negatively-charged NV$^-$-center in diamond has shown great success in nanoscale, high-sensitivity magnetometry. Efficient fluorescence detection is crucial for improving the sensitivity. Furthermore, integrated devices enable…
We present a portable multi-channel, multi-sample UV/vis absorption and fluorescence detection device, which has no moving parts, can operate wirelessly and on batteries, interfaces with smart mobile phones or tablets, and has the…
Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short…
Scalable fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for wide range of nanophotonics applications. We present here scalable…
Ultraviolet (UV) imagers are important for a variety of applications, such as quality inspection in the semiconductor industry, forensics and food quality inspection, but are often costly because they require dedicated semiconductor process…
Uni-traveling-carrier photodiodes (UTC-PDs), which utilize only electrons as the active carriers, have become indispensable in high-speed optoelectronics due to their unique capabilities, such as high saturation power and broad bandwidth.…