相关论文: Influence of doping on non-equilibrium carrier dyn…
Interband optical transitions in graphene are subject to pseudospin selection rules. Impulsive excitation with linearly polarized light generates an anisotropic photocarrier occupation in momentum space that evolves at timescales shorter…
At low values of external doping graphene displays a wealth of unconventional transport properties. Perhaps most strikingly, it supports a robust 'metallic' regime, with universal conductance of the order of the conductance quantum. We here…
Declining the lattice thermal conductivity in graphene is essential for its thermoelectric applications. In high electron density systems, scatterings of phonons by electrons are no less than the phonon scatterings by other phonons. With…
We modulate the atomic structure of bilayer graphene by driving its lattice at resonance with the in-plane E1u lattice vibration at 6.3um. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES) with extreme ultra-violet (XUV)…
Carrier doping by the electric field effect has emerged recently as an ideal route for monitoring many-body physics in two-dimensional (2D) materials where the Fermi level is tuned in a way that -- indirectly -- the strength of the…
Highly-doped graphene samples show the conductance reduced and the shot-noise power enhanced compared to standard ballistic systems in two-dimensional electron gas. These features can be understood within a model assuming incoherent…
Saturable absorption is a non-perturbative nonlinear optical phenomenon that plays a pivotal role in the generation of ultrafast light pulses. Here we show that this effect emerges in graphene at unprecedentedly low light intensities, thus…
We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back…
It is well known that impurities play a central role in the linear and nonlinear response of graphene at optical and terahertz frequencies. In this work, we calculate the bands and intraband dipole connection elements for nitrogen-doped…
There is an increasing amount of literature concerning electronic properties of graphene close to the neutrality point. Many experiments continue using the two-probe geometry or invasive contacts or do not control samples' macroscopic…
Using ultrafast optical pump-probe spectroscopy, we study the relaxation dynamics of hot optical phonons in few-layer and multi-layer graphene films grown by epitaxy on silicon carbide substrates and by chemical vapor deposition on nickel…
We calculate the diffusion barrier of fluorine adatoms on doped graphene in the diluted limit using Density Functional Theory. We found that the barrier $\Delta$ strongly depends on the magnitude and character of the graphene's doping…
The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend strongly on processing details and the substrate…
The doping of lighter non-metals like boron and nitrogen into graphene represents a promising advancement in the field of nano-electronic devices, particularly in the development of field-effect transistors (FETs). These doped…
Hot, dense phases of Dirac fermions - predicted to resemble relativistic plasma - are uniquely accessible through photoexcitation of pristine, charge neutral graphene. We demonstrate a sensitive temperature probe of the photoexcited Dirac…
We investigate the photoconductivity of graphene within the relaxation time approximation. In presence of the inter-band transitions induced by the linearly polarized light the photoconductivity turns out to be highly anisotropic due to the…
Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…
We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for…
We report here a general theory describing photoelectron transportation dynamics in GaAs semiconductor photocathodes. Gradient doping is incorporated in the model through the inclusion of directional carrier drift. The time-evolution of…
We consider the nonlinear terahertz response of n-doped monolayer graphene at room temperature using a microscopic theory of carrier dynamics. Our tight-binding model treats the carrier-field interaction in the length gauge, includes phonon…