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A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential.…

Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…

A central challenge for scalable quantum networks is the realization of coherent interfaces between stationary qubits and telecom-band photonic qubits for long-distance entanglement distribution. Semiconductor quantum dots emitting at…

Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations…

介观与纳米尺度物理 · 物理学 2021-01-26 Wojciech Rudno-Rudziński , Marek Burakowski , Johann Peter Reithmaier , Anna Musiał , Mohamed Benyoucef

We review the progress and main challenges in implementing large-scale quantum computing by optical control of electron spins in quantum dots (QDs). Relevant systems include self-assembled QDs of III-V or II-VI compound semiconductors (such…

量子物理 · 物理学 2010-09-13 Ren-Bao Liu , Wang Yao , L. J. Sham

Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…

Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots,…

介观与纳米尺度物理 · 物理学 2023-10-12 Chao Shen , Wenkang Zhan , Kaiyao Xin , Manyang Li , Zhenyu Sun , Hui Cong , Chi Xu , Jian Tang , Zhaofeng Wu , Bo Xu , Zhongming Wei , Chunlai Xue , Chao Zhao , Zhanguo Wang

Detailed theoretical study of the magneto-optical properties of weakly confining GaAs/AlGaAs quantum dots is provided. We focus on the diamagnetic coefficient and the $g$-factor of the neutral and the charged excitonic states, respectively,…

介观与纳米尺度物理 · 物理学 2020-09-16 Diana Csontosová , Petr Klenovský

Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The…

Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting…

We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime…

GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface.…

Due to the advantage of tunability via size, shape, doping and relatively low level of loss and high extent of spatial confinement, graphene quantum dots (GQDs) are emerging as an effective way to control light by molecular engineering. The…

材料科学 · 物理学 2015-02-13 Sharma S. R. K. C Yamijala , Madhuri Mukhopadhyay , Swapan K. Pati

We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…

介观与纳米尺度物理 · 物理学 2023-11-28 Imad Limame , Peter Ludewig , Ching-Wen Shih , Marcel Hohn , Chirag C. Palekar , Wolfgang Stolz , Stephan Reitzenstein

We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting…

介观与纳米尺度物理 · 物理学 2014-08-29 L. Bouet , M. Vidal , T. Mano , N. Ha , T. Kuroda , M. V. Durnev , M. M. Glazov , E. L. Ivchenko , X. Marie , T. Amand , K. Sakoda , G. Wang , B. Urbaszek

This study investigates the performance of droplet-etched GaAs quantum dots (QDs) integrated into micropillar structures using a deterministic fabrication technique. We demonstrate a unity QD positioning yield across 74 devices and…

We present a first comprehensive study on deterministic spin preparation employing excited state resonances of droplet etched GaAs quantum dots. This achievement facilitates future investigations of spin qubit based quantum memories using…

介观与纳米尺度物理 · 物理学 2021-08-11 Caspar Hopfmann , Nand Lal Sharma , Weijie Nie , Robert Keil , Fei Ding , Oliver G. Schmidt

Genuine quantum-mechanical effects are readily observable in modern optomechanical systems comprising bosonic ("classical") optical resonators. Here we describe unique features and advantages of optical two-level systems, or qubits, for…

The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber…

A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity…

介观与纳米尺度物理 · 物理学 2025-09-03 P. Steindl , T. van der Ent , H. van der Meer , J. A. Frey , J. Norman , J. E. Bowers , D. Bouwmeester , W. Löffler
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