相关论文: Host dependence of PL5 ensemble in 4H-SiC
The PL6 color center in 4H-SiC, known for its excellent ambient-temperature spin and optical properties, has an unresolved microscopic origin. In this first-principles study, we systematically investigate potential structures to clarify its…
Optically addressable spin defects in wide-bandgap semiconductors are promising building blocks for quantum sensing and quantum networks. Establishing their atomic structure is essential for understanding functionality and enabling…
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics such as the internal gain layer's efficiency in enhancing…
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI…
In the field of high-energy particle detection, detectors operating in high-radiation environments primarily face high costs associated with power consumption and cooling systems. Therefore, the development of particle detectors capable of…
We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
This contribution will delve into the design and performance of the newly produced Silicon Carbide Low Gain Avalanche Detectors (4H-SiC LGADs) and provide a comprehensive summary of their measured characteristics. This includes an analysis…
The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the…
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI…
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon…
The LHCb has reported the observation of a resonancelike structure, the Pc(4450), in the J/psi p invariant masses. In our work, we discuss the feasibility of detecting this structure in J/psi photoproduction, e.g. in the measurements that…
Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the…
Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109{\Omega}-cmby maintaining high C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectra…
Silicon vacancy ($\mathrm{V_{Si}}$) color centers in 4H-SiC are optically accessible through their zero-phonon line (ZPL) photoluminescence (PL), which is sensitive to the sample temperature. We report the effects of localized laser-induced…
Color centers in silicon carbide have become potentially versatile quantum sensors. Particularly, wide temperature range temperature sensing has been realized in recent years. However, the sensitivity is limited due to the short dephasing…
4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into…
Point defects in semiconductors offer a promising platform for advancing quantum technologies due to their localized energy states and controllable spin properties. Prior research has focused on a limited set of defects within materials…
When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect…
Defect qubits in 4H-SiC are outstanding candidates for numerous applications in the rapidly emerging field of quantum technology. Carbon clusters can act as emission sources that may appear after thermal oxidation of 4H-SiC or during…