相关论文: Equivalent Electric Model of a Macrospin

Using exact diagonalizations, we investigate the T=0 phase diagram of the Multi-Spin Exchange (MSE) model on the triangular lattice: we find a transition separating a ferromagnetic phase from a non-magnetic gapped Spin Liquid phase. Systems…

Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization…

A magnet with precessing magnetization pumps a spin current into adjacent leads. As a special case of this spin pumping, a precessing macrospin (magnetization) can assist electrons in tunneling. In small systems, however, the Coulomb…

The possibility of the existence of magnetic charges is one of the greatest unsolved issues of the physics of this century. The concept of magnetic monopoles has at least two attractive features: (i) Electric and magnetic fields can be…

We report experiments on micron-scale normal metal loop connected by superconducting wires, where the sample geometry enables full modulation of the thermal activation barrier with applied magnetic flux, resembling a symmetric quantum…

Alternating current (ac) circuits can have electromagnetic edge modes protected by symmetries, analogous to topological band insulators or semimetals. How to make such a topological circuit? This paper illustrates a particular design idea…

Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…

We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…

We extended McMillan's Green's function method to study the equilibrium spin current (ESC) in a ferromagnet/ferromagnet (FM/FM) tunnelling junction, in which the magnetic moments in both FM electrodes are not collinear. The single-electron…

Transport in superconducting heterostructures is very successfully described with quasiclassical Green's functions augmented by microscopically derived boundary conditions. However, so far the spin-dependence is in the diffusive approach…

Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting the paramagnetic molecules across two ferromagnets (FM) electrodes of a magnetic tunnel junction (MTJ). MTJMSD provides…

Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation,…

This paper addresses the question: Can spintronic circuits based on Magnetic Tunnel Junction (MTJ) transducers outperform their state-of-the-art CMOS counterparts? To this end, we use the EPFL combinational benchmark sets, synthesize them…

We propose to periodically modulate the onsite energy via two-tone drives, which can be furthermore used to engineer artificial gauge potential. As an example, we show that the fermionic ladder model penetrated with effective magnetic flux…

Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling…

We design a set of classical macroscopic electric circuits in which charge exhibits the mobility restrictions of fracton quasiparticles. The crucial ingredient in these circuits is a transformer, which induces currents between pairs of…

We present a tutorial on the properties of the new ideal circuit element, a memristor. By definition, a memristor M relates the charge q and the magnetic flux $\phi$ in a circuit, and complements a resistor R, a capacitor C, and an inductor…

The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…

Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…

Current-induced dynamics in spin valves including composite free layer with antiferromagnetic interlayer exchange coupling is studied theoretically within the diffusive transport regime. We show that current-induced dynamics of a synthetic…