相关论文: Equivalent Electric Model of a Macrospin

We present a theory for the spin correlation function of the t-J model in the framework of the dynamical mean-field theory. Using this mapping between the lattice and a local model we are able to obtain an intuitive expression for the…

A possibility to perform single-electron computing without dissipation in the array of tunnel-coupled quantum dots is studied theoretically, taking the spin gate NOT (inverter) as an example. It is shown that the logical operation can be…

Transistors are the cornerstone of modern electronics. Yet, their relatively complex characteristics, allied with often observed great parameter variation, remain a challenge for discrete and integrated electronics. Much of transistor…

We discuss the transition from a metal to charge or spin insulating phases characterized by the opening of a gap in the charge or spin excitation spectra, respectively. These transitions are addressed within the context of two exactly…

The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be…

Electric fields represent an ideal means for controlling spins at the nanoscale and, more specifically, for manipulating protected degrees of freedom in multispin systems. Here we perform low-temperature magnetic far-IR spectroscopy on a…

The Maxwell vector potential and the Dirac spinor used to describe the classical theory of electrodynamics both have components which are considered to be ordinary smooth functions on space-time. We reformulate electrodynamics by adding an…

We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage…

Fringing field has to be taken into account in the formulation of electrostatic parallel-plate actuators when the gap separating the electrodes is comparable to the geometrical dimensions of the moving plate. Even in this case, the existing…

Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…

We propose an effective model on the basis of a $j$-$j$ coupling scheme to describe local $f$-electron states for realistic values of Coulomb interaction $U$ and spin-orbit coupling $\lambda$, for future development of microscopic theory of…

We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…

In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it…

We have studied the anisotropic three-dimensional nearest-neighbor Ising model with competitive interactions in an uniform longitudinal magnetic field $H$. The model consists of ferromagnetic interaction $J_{x}(J_{z})$ in the $x(z)$…

The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two…

We propose a controlled Josephson spin current across the junction of two non-centrosymmetric superconductors like CePt_3Si. The Josephson spin current arises due to direction dependent tunneling matrix element and different momentum…

We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the…

A model of coherent tunneling, which combines multi-orbital tight-binding approximation with Landauer-B\"uttiker formalism, is developed and applied to all-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. A…

We present a theoretical study of momentum-resolved tunneling between parallel two-dimensional conductors whose charge carriers have a (pseudo-)spin-1/2 degree of freedom that is strongly coupled to their linear orbital momentum. Specific…

The interplay between spin transport and thermoelectricity offers several novel ways of generating, manipulating, and detecting nonequilibrium spin in a wide range of materials. Here we formulate a phenomenological model in the spirit of…