相关论文: On-chip GaAs carrier lifetime investigation
We have used transient absorption spectroscopy to measure carrier lifetimes in the multiband band semiconductor GaPAsN. These measurements probe the electron populations in the conduction band, intermediate band and valance band as a…
The sub-bandgap absorption and ultrafast relaxation in a GaAs/ErAs/GaAs heterostructure are reported. The infrared absorption and 1550 nm-excited ultrafast photo-response are studied by Fourier transform infrared (FTIR) spectrometry and…
We measure fast carrier decay rates (6 ps) in GaAs photonic crystal cavities with resonances near the GaAs bandgap energy at room temperature using a pump-probe measurement. Carriers generated via photoexcitation using an above-band…
Measurements of charge-carrier lifetime in many early-stage thin-film photovoltaic materials can be arduous due to the prevalence of defects and limited information about material properties. In this perspective, we give a brief overview of…
We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface…
The carrier lifetime of a photonic crystal all-optical switch is optimized by controlling the surface of GaAs by Atomic Layer Deposition. We demonstrate an all optical modulation capability up to 100GHz at Telecom wavelengths, with a…
We propose and demonstrate a method to characterize a gated InGaAs single-photon detector (SPD). Ultrashort weak coherent pulses, from a mode-locked sub-picosecond pulsed laser, were used to measure photon counts, at varying arrival times…
Ge$_{1-x}$Sn$_x$ semiconductors hold the premise for large-scale, monolithic mid-infrared photonics and optoelectronics. However, despite the successful demonstration of several Ge$_{1-x}$Sn$_x$-based photodetectors and emitters, key…
Achieving uniform nanowire size, density, and alignment across a wafer is challenging, as small variations in growth parameters can impact performance in energy harvesting devices like solar cells and photodetectors. This study demonstrates…
The half-life of 66Ga, an isotope very important for high-energy efficiency calibration of gamma-detectors, has been measured using gamma-spectroscopy. In order to reduce systematic uncertainties, different source production methods and…
Carrier distribution and dynamics in semiconductor materials often govern their physical properties that are critical to functionalities and performance in industrial applications. The continued miniaturization of electronic and photonic…
The literature half-life value of 65Ga is based on only one experiment carried out more than 60 years ago and it has a relatively large uncertainty. In the present work this half-life is determined based on the counting of the gamma-rays…
We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime…
As a future charge management light source, UV light-emitting diodes (UV LEDs) offer far superior performance in a range of metrics compared to the mercury lamps used in the past. As part of a qualification program a number of short…
Carrier recombination dynamics in strip silicon nano-waveguides is analyzed through time-resolved pump-and-probe experiments, revealing a complex recombination dynamics at densities ranging from ${10^{14}}$ to ${10^{17}}\,$cm$^{{-3}}$. Our…
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave…
Germanium-on-Silicon (Ge-on-Si) is a promising, CMOS-compatible platform for integrated terahertz (THz) photonics, offering a low-cost alternative to III-V semiconductors. A primary challenge for Ge-based photoconductive antennas (PCAs),…
We study the carrier relaxation dynamics in thin black phosphorus (bP) using time-resolved differential transmission measurements. The inter-band and intra-band transitions, relaxation, and carrier recombination lifetimes are revealed by…
We designed, fabricated and tested gallium phosphide (GaP) nano-waveguides for second harmonic generation (SHG). We demonstrate SHG in the visible range around 655 nm using low power continuous-wave pump in the optical communication O-band.…
We present measurements at millikelvin temperatures of the microwave-frequency acoustic properties of a crystalline silicon nanobeam cavity incorporating a phononic bandgap clamping structure for acoustic confinement. Utilizing pulsed laser…